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Preparation method for adjustable thermo-optic band pass filter pixel array

A manufacturing method and pixel array technology, applied in the fields of semiconductor manufacturing and thermal imaging, can solve the problems of high and difficult filter preparation

Active Publication Date: 2012-06-20
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] Here, each pixel array includes a thermal isolation structure and a tunable thermal-optical bandpass filter. For this filter, on the one hand, its constituent materials need to have a high thermal-optic coefficient (generally use amorphous silicon thin film), and on the other hand, On the one hand, it needs to have as little absorption as possible for the near-infrared detection light, so the preparation of the filter is very difficult

Method used

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  • Preparation method for adjustable thermo-optic band pass filter pixel array
  • Preparation method for adjustable thermo-optic band pass filter pixel array
  • Preparation method for adjustable thermo-optic band pass filter pixel array

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Embodiment 1

[0024] Such as figure 1 As shown, the manufacturing method of the tunable thermo-optic bandpass filter pixel array in the embodiment of the present invention includes:

[0025] S101, selecting a cavity material and a substrate material;

[0026] S102, fabricating thermal isolation columns on the front side of the cavity material through photolithography and etching processes;

[0027] S103, evaporating an Au metal layer on the non-isolation column area on the front of the cavity material and the surface of the thermal isolation column;

[0028] S104, evaporating an Au metal layer on the surface of the substrate material;

[0029] S105, bonding the Au metal layer on the surface of the thermal isolation column and the Au metal layer of the substrate material;

[0030] S106, etching the back side of the cavity material, so that the thickness of the cavity material is an integer multiple of 1 / 2 optical wavelength of the near-infrared detection light used;

[0031] S107, using ...

Embodiment 2

[0041] Such as figure 1 As shown, the manufacturing method of the tunable thermo-optic bandpass filter pixel array in the embodiment of the present invention includes:

[0042] S101, selecting a cavity material and a substrate material;

[0043] S102, fabricating thermal isolation columns on the front side of the cavity material through photolithography and etching processes;

[0044] S103, evaporating an Au metal layer on the non-isolation column area on the front of the cavity material and the surface of the isolation column;

[0045] S104, evaporating an Au metal layer on the surface of the substrate material;

[0046] S105, bonding the Au metal layer on the surface of the thermal isolation column and the Au metal layer of the substrate material;

[0047] S106, etching the back side of the cavity material, so that the thickness of the cavity material is an integer multiple of 1 / 2 optical wavelength of the near-infrared detection light used;

[0048] S107, using a photolit...

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Abstract

The invention discloses a preparation method for an adjustable thermo-optic band pass filter pixel array. Heat insulation columns are manufactured on the front side of a cavity material via photoetching and etching; heat insulation is achieved in an Au / Au linkage manner; and the characteristics of broad spectrum and high reflection ratio of an Au thin film are utilized, and a crystalline state semiconducting material with high thermo-optic coefficient serves as a cavity to achieve an F-P cavity thermo-optic adjustable filter. In the method provided by the invention, an amorphous silicon thin-film material with near infrared band low absorption coefficient is not required, so that the difficulty of the generation of an optical film is greatly reduced.

Description

technical field [0001] The invention relates to thermal imaging, in particular to the field of uncooled infrared imaging, and semiconductor manufacturing technology. Background technique [0002] Due to its low cost and small size, the uncooled infrared detection system has a very wide application prospect. At present, infrared detection chips based on the thermal resistance characteristics of materials such as amorphous silicon and vanadium oxide have been commercialized. At the same time, the micro-bandpass filter infrared imaging array using optical readout is its strong competitor. Since the optical readout uncooled infrared imaging system is a plenoptic system, compared with the traditional pyroelectric or polysilicon uncooled infrared imager, no complex readout circuit is required. Using the Fabry-Perot (F-P) cavity array as the core structure and using the principle of multi-beam interference to read infrared signals can not only make the system compact and simple, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146
Inventor 时文华
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI