Manufacturing method of tungsten target material

Abstract

A manufacturing method of a tungsten target material includes the steps of providing tungsten target blank, machining the surface of the tungsten target blank, placing the machined tungsten target blank in a vacuum sheath and vacuumizing, forging the tungsten target blank in the vacuum sheath, rolling the forged tungsten target blank in the vacuum sheath, cooling and removing the vacuum sheath after rolling. The manufacturing method of the tungsten target material does not require a mould, resolves the problems that cracks exist in rolling and extending the tungsten target blank and the surface of the tungsten target blank is prone to oxidation, is capable of manufacturing the tungsten target material which has uniform internal organization structure and meets the requirement of a sputtering target material for grain size. In addition, the manufacturing method of the tungsten target material has the advantages of being easy to machine and low in rejection ratio. The manufacturing method is more suitable for manufacturing the large-sized tungsten target material.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a tungsten target. Background technique [0002] Vacuum sputtering is a process in which electrons accelerate to the substrate under the action of an electric field and collide with argon atoms, ionizing a large number of argon ions and electrons. Among them, the electrons fly to the substrate, and the argon ions are accelerated under the action of an electric field. Bombard the target, the target is composed of the target and the back plate supporting the target, a large number of target atoms are sputtered out, and the neutral target atoms (or molecules) are deposited on the substrate to form a film, and finally the substrate The purpose of coating the surface of the sheet. [0003] Large-scale integrated circuits often use tungsten targets for vacuum sputtering, especially large-size tungsten targets. In the current semiconductor field, la...

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Problems solved by technology

[0006] The problem to be solved by the present invention is to propose a new manufacturing method of tungsten target material to solve the problem that the existing tungsten target material blank is hard and brittle and difficult to process, and the surface of the tungsten target material blank is easy to oxidize in the air and cannot be processed in the air. calendering problem

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