Semiconductor photochemical catalyst with copper phosphate modified surface and preparation method thereof

A photocatalyst and surface modification technology, which is applied in the direction of catalyst activation/preparation, chemical instruments and methods, physical/chemical process catalysts, etc., can solve problems such as easy recombination, reduced photocatalytic efficiency, and large band gap of TiO2. Simplicity, increased photocatalytic rate, and low-cost effects

Inactive Publication Date: 2012-07-04
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, TiO2 itself still has some obvious deficiencies, such as 1. The bandgap of TiO2 is too large (E=3.2Vvs NHE or so), and it can only be excit...

Method used

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  • Semiconductor photochemical catalyst with copper phosphate modified surface and preparation method thereof
  • Semiconductor photochemical catalyst with copper phosphate modified surface and preparation method thereof
  • Semiconductor photochemical catalyst with copper phosphate modified surface and preparation method thereof

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preparation example Construction

[0043] Method 1 The preparation method 1 of the semiconductor photocatalyst with copper phosphate modified surface comprises the following steps:

[0044] 1) At room temperature, the precursor semiconductor photocatalyst is dispersed in an aqueous solution of copper ions as a precipitant, and the molar ratio of semiconductor photocatalyst to copper ions is 12500:2~12500:780;

[0045] 2) Under vigorous stirring, add phosphate aqueous solution, the molar ratio of semiconductor photocatalyst to phosphate anion is 12500:1~12500:520, and the molar ratio of copper ion to phosphate anion is 0.75:1~3:1;

[0046] 3) Make the pH of the reaction solution between 6 and 11 by adding a pH regulator;

[0047] 4) At room temperature, stir for 30 minutes and sonicate for 30 minutes;

[0048] 5) The precipitate is filtered, washed with water, dried at 70°C to 120°C, and ground into powder to obtain a semiconductor photocatalyst with a copper phosphate-modified surface.

[0049] The above proc...

Embodiment 1

[0087] Get 2.6g commercial titanium dioxide, disperse in 40ml concentration and be 0.516mM Cu(NO 3 ) 2 In the aqueous solution (Solution S1), placed on a magnetic stirrer at room temperature to stir, slowly drop 40mL of Na with a concentration of 0.762mM 3 PO 4 aqueous solution (solution S2). By adding 20% ​​dilute ammonia water, the pH value of the control system is about 10. After the dropwise addition is completed, continue stirring for 30 min and ultrasonication for 30 min. The resulting precipitate was filtered, washed, and dried at 90° C. to obtain a titanium dioxide catalyst A with a copper phosphate-modified surface. where TiO 2 With Cu element, PO 4 3- The feeding molar ratio of ions is 12500:7.77:11.96. Using the above photocatalytic activity evaluation method, after 2 hours of irradiation under ultraviolet light, the degradation rates of catalyst A and titanium dioxide to phenol were 42.61% and 20.33%, respectively. Obviously, under the same conditions, Cat...

Embodiment 2

[0090] Experimental condition, step are the same as embodiment one, wherein change the feed ratio of each material, get 0.9949g commercial titanium dioxide, be dispersed in 40ml concentration and be the Cu(NO 3 ) 2 In the aqueous solution, add dropwise 40ml of Na with a concentration of 2.027mM 3 PO 4 Aqueous solution, in which TiO 2 With Cu element, PO 4 3-The feeding molar ratio of ions is 12500:39.87:81.51. Using the above photocatalytic activity evaluation method, after irradiating with ultraviolet light for 2 hours, the degradation rates of catalyst B and titanium dioxide to phenol were 23.77% and 20.33%, respectively.

[0091]

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Abstract

The invention provides a semiconductor photochemical catalyst with a copper phosphate modified surface, which comprises semiconductor powder particles with copper phosphate arranged outside. The copper phosphate is evenly dispersed on the surfaces of the semiconductor power particles in solid powder mode. Photochemical rate of the semiconductor photochemical catalyst is remarkably improved. The invention further provides a preparation method of the semiconductor photochemical catalyst. The preparation method uses the semiconductor photochemical catalyst as a precursor, uses copper phosphate as modification materials and deposits and disperses copper phosphate particles on the surfaces of the semiconductor power particles evenly in wet process chemistry method. The semiconductor photochemical catalyst with the copper phosphate modified surface is prepared without changing self crystal texture, crystal phase composition and even grain size of precursor semiconductor. The semiconductor photochemical catalyst with the copper phosphate modified surface is low in raw material cost and the preparation method is simple in device and easy to operate. Compared with pure semiconductor photochemical catalyst, ultraviolet visible light catalytic activity of the obtained photochemical catalyst is obviously improved, and adsorbability to organic pollution is improved.

Description

[0001] technical field [0002] The invention relates to a semiconductor nanometer photocatalyst and a preparation method thereof, which belong to the field of catalytic technology. More specifically, the invention provides a semiconductor nanometer powder photocatalyst with a copper phosphate-modified surface and high catalytic activity and a preparation method thereof . Background technique [0003] In the 21st century, energy shortage and environmental pollution are becoming more and more serious, which have become the main problems facing the world today. Therefore, governments, scientists and technicians of various countries have actively taken measures to deal with it. Among many treatment methods, semiconductor photocatalysis technology is particularly attractive. It can directly use ultraviolet light from various channels including sunlight, and can completely decompose various organic or inorganic pollutants at room temperature. Degradation and mineralization, so ...

Claims

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Application Information

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IPC IPC(8): B01J27/18B01J27/188B01J27/185A62D3/176A62D101/28
CPCB01J21/06B01J37/03B01J27/18B01J37/04B01J37/031B01J37/28B01J21/063B01J23/06B01J23/22B01J23/30B01J23/745B01J27/1817B01J35/002B01J35/004B01J37/0036
Inventor 许宜铭陈海航
Owner ZHEJIANG UNIV
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