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Chemical-mechanical grinding method and equipment for copper

A technology of chemical machinery and grinding method, which is applied in the direction of grinding device, grinding machine tool, metal processing equipment, etc. It can solve the problems that affect the performance of the device, copper residue cannot be removed, etc., and achieve the effect of improving performance

Inactive Publication Date: 2012-07-04
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The technical problem to be solved by the present invention is to provide a copper chemical mechanical polishing method to solve the problem that when the copper interconnection is formed by the copper chemical mechanical polishing method in the prior art, there are often copper residues on the copper interconnection in the opening. Problems that cannot be removed and thus affect the performance of the device

Method used

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  • Chemical-mechanical grinding method and equipment for copper
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  • Chemical-mechanical grinding method and equipment for copper

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Embodiment Construction

[0025] In order to make the above objects, features and advantages of the present invention more obvious and comprehensible, specific implementations of the present invention will be described in detail below.

[0026] The copper chemical mechanical polishing method described in the present invention can utilize multiple replacement modes to realize, and below is to illustrate by preferred embodiment, certainly the present invention is not limited to this specific embodiment, those of ordinary skill in the art Known general substitutions are undoubtedly covered by the protection scope of the present invention.

[0027] Please refer to 2a to Figure 2f , Figure 2a to Figure 2f It is a schematic cross-sectional view of the corresponding structures in each step of the copper chemical mechanical polishing method of the present invention.

[0028] see Figure 2a , Figure 2a For carrying out the schematic cross-sectional view of the device structure before the method of the pr...

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Abstract

The invention provides a chemical-mechanical grinding method and equipment for copper. According to the invention, a grinding step is added on the basis of the prior art. A copper residual layer on a medium layer opening is ground by using a grinding liquid with high copper selection ratio, so that the copper residual layer on the opening can be fully removed, and the performance of a device can be improved effectively.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a copper chemical mechanical polishing method and equipment. Background technique [0002] With the advancement of semiconductor integrated circuit manufacturing technology, the line width is getting smaller and smaller. In order to reduce the resistance-capacitance delay (RC delay) of the back-end interconnection structure, a dielectric material with a low dielectric constant is used as the dielectric layer, and copper Metal is used as the material of the interconnection lines. Since copper metal is difficult to etch, the industry introduces a damascene process or a dual damascene process to manufacture copper interconnection lines. In the manufacturing method of copper interconnection line, first form the dielectric layer of low dielectric constant; Next, form opening in this dielectric layer; Then, deposit metallic copper in described opening and on the di...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B37/00
Inventor 邓武锋
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP