Suspending imaging hafnium oxide substrate nitride syntony photon device and preparation method thereof

A photonic device, hafnium oxide technology, applied in piezoelectric devices/electrostrictive devices, piezoelectric/electrostrictive/magnetostrictive devices, microstructure devices composed of deformable elements, etc., can solve the problem of nitrides. Nanostructure etching damage and other problems, to achieve the effect of avoiding etching damage

Inactive Publication Date: 2012-07-04
NANJING UNIV OF POSTS & TELECOMM
View PDF4 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a suspended patterned hafnium oxide that can solve the problem of etching damage in the process of preparing nitride nanostructures, and directly obtain high-quality suspended nitride resonant photonic devices through growth. Substrate nitride resonant photonic device and its preparation method

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Suspending imaging hafnium oxide substrate nitride syntony photon device and preparation method thereof
  • Suspending imaging hafnium oxide substrate nitride syntony photon device and preparation method thereof
  • Suspending imaging hafnium oxide substrate nitride syntony photon device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] Below in conjunction with accompanying drawing, technical scheme of the present invention is described in further detail:

[0036] Such as figure 1 As shown, the present invention designs a suspended patterned hafnium oxide substrate nitride resonant photonic device, and realizes that the carrier is a silicon substrate wafer, which is characterized in that:

[0037] It also includes a hafnium oxide substrate layer and a nitride thin film layer, the hafnium oxide substrate layer is arranged on the silicon substrate wafer, and the nitride thin film layer is arranged on the hafnium oxide substrate layer;

[0038] The silicon substrate wafer has a concave cavity structure;

[0039] The part of the nitride thin film layer and the hafnium oxide substrate layer located on the upper part of the concave cavity has the same nanophotonic device structure.

[0040] Figure 4 Shown is a suspended nitride 2D photonic crystal.

[0041] Figure 5 Shown is a suspended nitride circu...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a suspending imaging hafnium oxide substrate nitride syntony photon device and a preparation method thereof, and a silicon substrate wafer is taken as a carrier. The photon device is characterized by comprising a hafnium oxide substrate layer and a nitride thin layer which are positioned on a silicon wafer from bottom to top, wherein the silicon substrate layer is provided with a concave cavity structure; the parts positioned on the upper part of the cavity, of a top layer nitride device layer and the hafnium oxide substrate layer are of the same nanometer photon device structure; and the invention also discloses the preparation method of the suspending imaging hafnium oxide substrate nitride syntony photon operating range. The suspending imaging hafnium oxide substrate nitride syntony photon device and the preparation method thereof provided by the invention can solve a sculpture damage problem in a preparation process of a nitride nanometer structure, thereby directly obtaining a high-grade suspending nitride syntony photon device in a grown manner.

Description

technical field [0001] The invention provides a suspended patterned hafnium oxide substrate nitride resonant photonic device and a preparation method thereof, belonging to the field of information functional materials and devices. Background technique [0002] Group III nitride materials have excellent physical and chemical properties and are new semiconductor materials for the development of optoelectronic devices. In the process of preparing nitride photonic device structures, etching damage will inevitably be introduced, which will reduce the performance of the device. The patterned growth technology is an effective way to solve this problem, and the device structure is obtained through the growth technology, which avoids etching damage. Hafnium oxide film is an excellent nitride substrate material. During the growth process, the surface of hafnium oxide will be nitrided to form a layer of hafnium nitride film, and the lattice matching between hafnium nitride and Group ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): B81B3/00B81C1/00
Inventor 王永进朱洪波
Owner NANJING UNIV OF POSTS & TELECOMM
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap