Preparation method of large-size ITO target material

A large-scale, target technology, applied in the field of transparent conductive film targets, to achieve the effect of less initial investment and small size restrictions

Inactive Publication Date: 2012-07-04
KUNMING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] It can be seen from the comparison of the above-mentioned ITO target production process at home and abroad: 1) The isostatic pressing forming technology adopted in China in terms of forming, due to the limitation of isostatic pressing equipment Limitations limit the size of the ITO target, and the prepared ITO target also has disadvantages such as uneven density, low yield, poor stability, high requirements for molds and presses, easy introduction of impurities, and inability to form curved targets.
Although foreign grouting forming technology is relatively mature, due to the blockade of domestic technology, although some units in our country have carried out preliminary research work and obtained relatively mature technology and equipment, there is still a long distance from actual production.
2) In terms of sintering process, the current relatively advanced sintering process in China is high-pressure atmosphere sintering technology, which results in long sintering cycle, large gas consumption, low equipment output investment ratio, unstable product quality, and certain risks during operation

Method used

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  • Preparation method of large-size ITO target material
  • Preparation method of large-size ITO target material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] (1) Take ITO powder, mix different nano-level ITO powder in proportion (weight percentage), then add 10wt% deionized water of ITO powder and 2wt% dispersant polyethylene glycol (PEG), and then pass Ball mill for 4 hours to pass through a 200-mesh sieve, and finally wash twice with deionized water; the nanoscale of ITO powder is divided into 20nm, 40nm, and 90nm, and the proportion of ingredients can be 20nm:40nm:90nm=4:2: 1, the IITO powders are commercially available with a purity of more than 99.995wt%.

[0025] (2) After filtering the washed ITO powder prepared in step (1), add 8wt% binder polyvinyl alcohol (PVA) of ITO powder dry material, and stir for 1 hour;

[0026] (3) Extrude the mixture obtained in step (2) into a sheet under a pressure of 200MPa, and then repeatedly roll it twice under a rolling pressure of 0.1Pa;

[0027] (4) Place the billet that has passed through step (3) at a temperature of 250°C and keep it warm for 6 hours to degrease;

[0028] (5) S...

Embodiment 2

[0030] (1) Take ITO powder, mix different nano-scale ITO powder in proportion (weight percentage), then add 30wt% deionized water of ITO powder and 10wt% dispersant polyethylene glycol (PEG), and then pass Ball mill for 3 hours to pass through a 200-mesh sieve, and finally wash once with deionized water; the nanoscale of ITO powder is divided into 20nm, 40nm, and 80nm, and the proportion of ingredients can be 20nm:40nm:80nm=3:2: 1, the IITO powders are commercially available with a purity of more than 99.995wt%.

[0031] (2) After filtering the washed ITO powder prepared in step (1), add 2wt% binder polyvinyl alcohol (PVA) of ITO powder dry material, and stir for 2 hours;

[0032] (3) Extrude the mixture obtained in step (2) into a sheet under a pressure of 400MPa, and then repeatedly roll it 4 times under a rolling pressure of 0.05Pa;

[0033] (4) Put the billet after step (3) in the temperature range of 300°C, keep it warm for 3 hours to degrease;

[0034] (5) Send the bla...

Embodiment 3

[0036] (1) Take ITO powder, mix different nano-scale ITO powder in proportion (weight percentage), then add 5wt% deionized water of ITO powder and 1wt% dispersant polyethylene glycol (PEG), and pass Ball mill for 15 hours to pass through a 200-mesh sieve, and finally wash with deionized water for 3 times; the nanoscale of ITO powder is divided into 20nm, 40nm, and 60nm, and the proportion of ingredients can be 20nm:40nm:60nm=2:2: 1, the IITO powder is commercially available with a purity of more than 99.995wt%.

[0037] (2) After filtering the washed ITO powder prepared in step (1), add 20wt% binder polyvinyl alcohol (PVA) of ITO powder dry material, and stir for 3 hours;

[0038] (3) Extrude the mixture obtained in step (2) into a sheet under a pressure of 600 MPa, and then repeatedly roll it 3 times under a rolling pressure of 3 Pa;

[0039] (4) Put the billet after step (3) in the temperature range of 600°C, keep it warm for 4 hours to degrease;

[0040] (5) Send the blan...

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Abstract

The invention relates to a preparation method of a large-size ITO target material, and belongs to the technical field of transparent conductive film target materials. The technology can prepare a large-size ITO target material by traditional extrusion equipment, rolling equipment, and sintering equipment; the process comprises the following steps: appropriately proportioning ITO powder with different particle sizes, adding a proper forming agent, performing extrusion, rolling, degreasing, and sintering to obtain the ITO target material with high density. The advantage of the process is that the size of the ITO target material can be designed according to market demand.

Description

Technical field: [0001] The invention relates to a method for preparing a large-size ITO target, which belongs to the technical field of transparent conductive film targets. Background technique: [0002] After analyzing the status quo of high-performance ITO target production technology, Hui Yaohui and others believe that: most domestic ITO target products are used for low-end TN conductive glass, while ITO target products for mid-range STN and high-end TFT-LCD are not yet available. able to provide. Globally, high-end ITO targets for TFT-LCD come from Japan's Tosoh, Hitachi, Sumitomo, Nippon Energy, Mitsui, South Korea's Samsung Corning, America's Umigram, Germany's Helix and other companies. In particular, Japan has always been in a leading position in high-end ITO target production technology, and has almost monopolized most of the TFr liquid crystal market. Since ITO production technology is a highly confidential business secret, there is not much public information...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/622C04B35/457C04B35/01
Inventor 周晓龙曹建春陈敬超黎敬涛于杰
Owner KUNMING UNIV OF SCI & TECH
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