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A chemical mechanical polishing fluid for polishing tungsten

A chemical machinery, polishing liquid technology, applied in other chemical processes, chemical instruments and methods, polishing compositions containing abrasives, etc., can solve the problem of reducing the polishing selection ratio of tungsten and silicon dioxide, and improve the polishing selection ratio. , the effect of high polishing speed

Active Publication Date: 2016-01-27
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The above patents increase the polishing speed of silicon dioxide while increasing the speed of tungsten, but reduce the polishing selectivity ratio of tungsten and silicon dioxide

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] The chemical mechanical polishing liquid for polishing tungsten of the present invention includes silver nitrate (providing silver ions), ammonium sulfate (providing sulfate ions), hydrogen peroxide (hydrogen peroxide) and gas-phase silicon dioxide abrasives. The mass percentage and pH value of each main component are shown in Table 1.

[0032] Each component is mixed evenly in deionized water, and the pH value of the polishing solution is adjusted to 2.5 with a pH regulator.

Embodiment 2~5 and 11

[0034] Referring to Example 1, see Table 1 for the mass content of the main components of the chemical mechanical polishing solution in Examples 2 to 5 and 11 of the present invention.

Embodiment 6 and 10

[0036] Referring to Example 1, the chemical mechanical polishing solutions of Examples 6 and 10 of the present invention use potassium sulfate to provide sulfate ions, and the mass percentages of each main component are shown in Table 1.

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PUM

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Abstract

The invention discloses a chemical mechanical polishing liquid, which comprises water, gas-phase silicon dioxide, silver ions, sulfate ions and peroxide. The polishing fluid has a very high tungsten polishing speed, and at the same time significantly improves the polishing selectivity ratio of tungsten and silicon dioxide.

Description

technical field [0001] The invention relates to a chemical mechanical polishing fluid, in particular to a chemical mechanical polishing fluid for polishing tungsten materials. Background technique [0002] With the continuous development of semiconductor technology and the continuous increase of large-scale integrated circuit interconnection layers, the planarization technology of conductive layers and insulating dielectric layers has become particularly critical. Among them, the chemical mechanical technology pioneered by IBM in the 1980s Polishing (CMP) technology is considered to be the most effective method for global planarization at present. Chemical mechanical polishing (CMP) is a technique for planarization by chemical action, mechanical action, or a combination of the two; it usually consists of a grinding table with a polishing pad, and a grinding head for carrying the chip composition. The grinding head fixes the chip, and then presses the front of the chip on t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02
CPCC09G1/02C09K3/1463C23F3/06H01L21/3212
Inventor 何华锋王晨
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD