Chemical mechanical polishing solution and application thereof

Abstract

The invention provides a chemical mechanical polishing solution. The chemical mechanical polishing solution comprises grinding particles, a corrosion inhibitor, a complexing agent, an oxidizing agentand at least one polyacrylic acid anionic surfactant. The invention further provides application of the polishing solution in metal copper polishing. According to the chemical mechanical polishing solution and the application thereof, the effect of improving the polishing selection ratio of the polishing solution to the copper and tantalum barrier layer is achieved; and when the polishing solutionis used for polishing a wafer, dishing and dielectric layer erosion of the copper wire after polishing can be relieved, and the defects of copper residue, corrosion and the like after polishing are overcome.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing liquid, in particular to a chemical mechanical polishing liquid and its application in polishing metal copper. Background technique [0002] With the development of semiconductor technology and the miniaturization of electronic components, an integrated circuit contains millions of transistors. In the process of operation, after integrating such a large number of transistors that can switch quickly, the traditional aluminum or aluminum alloy interconnection wires reduce the speed of signal transmission, and consume a lot of energy in the process of current transmission. In a certain sense, It also hinders the development of semiconductor technology. For further development, people began to look for materials with higher electrical properties to replace the use of aluminum. As we all know, copper has low resistance and good conductivity, which speeds up the transmission speed of signa...

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Problems solved by technology

[0007] In summary, it can be seen that the polishing solution disclosed in the prior art corrodes the surface of the polished substrate in an acidic environment, which is not conducive to the utilization of the polished substrate, and the polishing efficiency is low.

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