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Polishing method

A technology of polishing pad and polishing liquid, which is applied in the field of polishing, can solve problems such as scratches on metal materials, and achieve the effect of avoiding scratches, avoiding scratches, and improving yield

Active Publication Date: 2012-07-11
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The problem to be solved by the present invention is that when the metal material with very low hardness on the wafer is polished, the by-products remaining on the polishing pad will scratch the surface of the metal material

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Embodiment Construction

[0027] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0028] In the following description, specific details are set forth in order to provide a thorough understanding of the present invention. However, the present invention can be implemented in many other ways than those described here, and those skilled in the art can make similar extensions without departing from the connotation of the present invention. Accordingly, the present invention is not limited to the specific embodiments disclosed below.

[0029] As mentioned in the background technology, in the existing polishing process, the by-products produced by aluminum in the CMP process (that is, the metal oxides generated by the polishing agent to oxidize aluminum, mainly aluminum oxide and aluminum hydroxide) will remain in the The...

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Abstract

The invention discloses a polishing method. The polishing method comprises the following steps of: polishing a metal material of the last wafer, finishing a polishing pad, spraying an organic acid solution to the polishing pad, and spraying de-ionized water to the polishing pad; and carrying out water removal treatment on the polishing pad, spraying a polishing solution on the polishing pad, and polishing the metal material of the next wafer. The polishing method provided by the invention can be used for preventing the surface of the metal material of the wafer from being scratched, and improving the yield.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a polishing method. Background technique [0002] With the continuous development of semiconductor manufacturing technology, the feature size (CD, Critical Dimension) of semiconductor devices in integrated circuits is getting smaller and smaller. In order to solve a series of problems caused by small-sized devices, high dielectric constant (High-K) The technology of combining the material gate dielectric layer and the metal gate (Metal Gate) electrode is introduced into the manufacturing process of MOS transistors. At present, the high-K metal gate (HKMG, High-K Metal Gate) technology has become a manufacturing process below 32nm. The mainstream of craftsmanship. Among them, chemical mechanical polishing (CMP, Chemical Mechanical Polishing) for the metal gate is one of the most important process steps. The mechanism of CMP is that the surface material reacts chemicall...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B29/00B24B53/007
CPCB24B53/017B24B29/00B24B53/007
Inventor 蒋莉黎铭琦
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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