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High-speed erasing test system for phase change memory unit

A phase-change memory and test system technology, applied in static memory, instruments, etc., can solve the problems that the bandwidth of the signal source cannot meet the requirements of high-speed pulse signal generation and transmission, and cannot be erased and written by high-speed pulses of the unit, so as to achieve low loss and high bandwidth Effect

Active Publication Date: 2012-07-11
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The signal source bandwidth and transmission channel bandwidth of the traditional phase change memory cell erasing characteristics test scheme cannot meet the generation and transmission requirements of high-speed pulse signals, and cannot realize high-speed pulse erasing (such as short voltage pulses within 10ns) for cells.

Method used

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  • High-speed erasing test system for phase change memory unit
  • High-speed erasing test system for phase change memory unit
  • High-speed erasing test system for phase change memory unit

Examples

Experimental program
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Effect test

example 1

[0050] The picosecond pulse generator 2 is produced by Picosecond pulse labs, the model is 10070A. The main specifications of the generated pulse signal are: the pulse amplitude range is between -7.5V and 7.5V, and the pulse width range is 0.1 ns-10ns, the step is 0.1ns, the typical value of the rising edge of the pulse is 40ps, and the typical value of the falling edge of the pulse is 80ps; , built-in pulse generator 5, built-in SMU6, etc. The excitation current range provided by SMU6 is 50aA-105mA, the excitation voltage range is 5μV-210V, the current measurement range is 10aA-105mA, the voltage measurement range is 1μV-210V, and the built-in pulse generator The specifications of the device 5 are: the pulse amplitude range is between -20V and 20V, the pulse width is between 10ns-1s, and the range of the rising edge and the falling edge of the pulse is 10ns-1s; the digital real-time sampling oscilloscope 8 is produced by the Tektronix Company Production, model is DPO70604, -3...

example 2

[0053] The test system configuration is the same as in Embodiment 1, the difference is that the purpose of this example is to find the high-speed SET pulse width parameter range of the unit under test. image 3 Parameter array R in test program flowchart reset [n], R set [n] Swap the position, and change to determine R reset Is [i] less than R ratio *Res0, if the result is true, perform a RESET operation.

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PUM

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Abstract

The invention discloses a high-speed erasing test system for a phase change memory unit, which comprises a picosecond pulse generator, a semiconductor characteristic tester, a digital real-time sampling oscilloscope, an active probe and a test circuit board, wherein the test circuit board can be replaced by a radio frequency probe station. The picosecond pulse generator can generate voltage pulses with extremely narrow pulse width, the whole system bandwidth is high, and the test program can control the picosecond pulse generator to generate quasi-continuous pulse sequences with the pulse width between 0.2 ns and 10 ns, accordingly, the system can scan and measure the width range of high-speed erasing pulses of the phase change memory unit array by changing the erasing pulse width. All in all, according to the test system, high-speed erasing tests can be conducted for the phase change memory unit; and the test system has the advantages of high bandwidth and low loss.

Description

technical field [0001] The invention relates to a high-speed erasing and writing testing system for phase-change memory cells, belonging to the technical field of semiconductor testing. Background technique [0002] Phase change memory is a non-volatile solid-state memory based on chalcogenide compounds. Ovshinsky published the first article about the reversible phase transition of chalcogenides under the action of electric current in 1968, which inspired people to use chalcogenides to fabricate non-volatile solid-state memory. [0003] Chalcogenide compounds have different electrical conductivity in polycrystalline state and amorphous state, and their electrical conductivity can reach more than 10,000 times that of amorphous state after full crystallization. Generally speaking, we can put the polymorphic state of the chalcogenide compound to represent the number "1", and the amorphous state to represent the number "0", thus realizing the storage of the data "0" and "1". C...

Claims

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Application Information

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IPC IPC(8): G11C29/56
Inventor 缪向水李震黄冬其
Owner HUAZHONG UNIV OF SCI & TECH