Method for enlarging bonding area of chip
A chip bonding and area technology, applied in the direction of sustainable manufacturing/processing, electrical components, climate sustainability, etc., can solve problems such as poor appearance, grain loss, and increased manufacturing costs, so as to save chemicals and equipment use The effect of reducing the abnormal occurrence of bonded layer shedding, and the operation of the equipment is simple and convenient
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2012-07-11
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
Figure 1 Figure 2 Figure 3
Abstract
Description
technical field
[0001] The invention patent relates to a method for increasing the chip bonding area Background technique
[0002] The semiconductor lighting industry has risen in the world. In the national medium and long-term science and technology planning strategy seminar, the "New Century Lighting Project" has been recommended as a major project, and the development of semiconductor lighting projects has entered a new era. Chip bonding technology is an important technology in the field of semiconductor optoelectronics and power electronics. It adds some kind of adhesive between two chips, and then bonds them together by chemical or physical methods to form a new substrate. At present, in the existing chip bonding process, a back-mounted plating pot is used when the chip is evaporated (such as figure 2 shown), the edge is due to the evaporation cover ( image 3 ) ring, the evaporated material cannot be deposited on the edge of the wafer, resulting in a small bonding ar...
Examples
Embodiment Construction
[0016] The present invention can adopt following implementation method to realize:
[0017] (1) the wafer is cleaned;
[0018] (2) Put the vapor deposition target in the coating machine, then place the wafer in the vertical plating pot, and put the plating pot into the coating machine;
[0019] (3) Vacuuming 4.5×10 -4 Pa, began to evaporate.
[0020] (4) After the evaporation is completed, the wafer is removed from the positive plating pot for bonding.