Manufacturing method of phase change memory

Abstract

The invention provides a manufacturing method of a phase change memory. The manufacturing method comprises the following steps of: providing a semiconductor substrate, wherein a bottom electrode and a first medium layer which is flush with the bottom electrode are formed on the surface of the semiconductor substrate; forming a second medium layer on the surface of the first medium layer, wherein a groove is formed in the second medium layer, and the bottom electrode below is exposed out of the groove; forming a side wall on the side wall of the groove; forming phase change layers on the surface of the second medium layer and in the groove, wherein the phase change layers are at least filled into the groove and covered on the surface of the second medium layer; forming a sacrifice layer above the phase change layers, wherein the sacrifice layer is used for protecting the phase change layers in the groove; and performing a flattening process to remove the sacrifice layer and the phase change layers outside the groove and on the surface of the second medium layer, so that the phase change layer in the groove is flush with the second medium layer. According to the manufacturing method, the yield of the phase change memory is raised.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a manufacturing method of a phase-change memory. Background technique [0002] Phase Change Random Access Memory (PCRAM) technology is based on the idea that S.R. Ovshinsky proposed in the late 1960s that phase change films could be applied to phase change storage media. As an emerging non-volatile storage technology, phase change memory has great advantages over flash memory in many aspects such as read and write speed, read and write times, data retention time, unit area, and multi-value realization. Become the focus of current non-volatile memory technology research. [0003] In phase-change memory, the value of the memory can be changed by heat-treating the phase-change layer on which data is recorded. The phase change material constituting the phase change layer enters a crystalline state or an amorphous state due to the heating effect of an applied electric current...

AI Technical Summary

Problems solved by technology

[0010] In practice, it is found that the yield rate of the phase change memory made by the prior art is low

Images