Physical vapor deposition method of aluminum-copper film
A physical vapor deposition and film deposition technology, which is applied in the field of integrated circuit manufacturing, can solve problems affecting the yield of silicon wafers, etc., and achieve the effects of overcoming the defects of excessive temperature and excessive temperature fluctuation, stabilizing the deposition temperature, and reducing the incidence rate
Inactive Publication Date: 2012-07-18
ADVANCED SEMICON MFG CO LTD
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Problems solved by technology
If the minimum line width of metal wiring is lower than 15KA, it will affect the yield rate of silicon wafers
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[0029] In order to make the purpose and features of the present invention more obvious and understandable, the specific implementation manners of the present invention will be further described below in conjunction with the accompanying drawings.
[0030] In the physical vapor deposition method of the aluminum-copper film, the processing chamber used includes: a cavity, an aluminum-copper target as a cathode, and a substrate base as an anode; the back of the aluminum-copper target is provided with a magnetron As for the accessory set, the cavity is provided with a first cooling water system, the magnetron accessory set is provided with a second cooling water system, and the substrate base is provided with a third cooling water system and a heater.
[0031] The physical vapor deposition method of the aluminum-copper film includes: sending the substrate into a processing chamber, and depositing the aluminum-copper film on the surface of the substrate; during the process of deposi...
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The invention provides a physical vapor deposition method of an aluminum-copper film. The physical vapor deposition method comprises the following steps of: feeding a substrate into a treating chamber, and carrying out aluminum-copper film deposition on the surface of the substrate, wherein the treating chamber comprises a chamber body, an aluminum-copper target material as a cathode and a substrate base as an anode, a magnetic control assembly group is arranged at the back surface of the aluminum-copper target material, a first cooling water system is arranged in the chamber body, a second cooling water system is arranged in the magnetic control assembly group, and a third cooling water system and a heater are arranged in the substrate base. In a process of carrying out the aluminum-copper film deposition on the surface of the substrate, the first cooling water system, the second cooling water system and the third cooling water system keep circulation. Through the technical scheme provided by the invention, the temperature change range of the chamber body can be controlled within 5 DEG C so that the incidence of a beard-shaped defect can be effectively reduced.
Description
technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a physical vapor deposition method of an aluminum-copper film. Background technique [0002] The physical vapor deposition (physical vapor deposition: PVD) technique is also generally referred to as "sputtering". The main parts of a PVD sputtering chamber include: a target smelted from the material used for deposition; a pedestal that supports the wafer; and a rotating magnet that helps strike the plasma. The PVD process requires a high vacuum environment to generate plasma. When a large negative DC voltage is applied to the target, electrons are excited and bombard Ar atoms to form Ar+ ions. Ar+ ions are attracted by the negatively charged target at a high speed. To strike the target, the impact on the target causes metal atoms and extra electrons to be released, and finally the sputtered metal atoms are deposited on the wafer to form a metal film. [0003] PVD ...
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IPC IPC(8): C23C14/14C23C14/35
Inventor 刘峰松徐雷军归剑孙远何德安
Owner ADVANCED SEMICON MFG CO LTD