Device for preparing black silicon

Abstract

The invention discloses a device for preparing black silicon, which comprises a reaction chamber (100), a gas flow control device (110), a pressure intensity regulation and control device (140), a cooling device (150), a coil power source component and a flat-plate power source component, and is characterized in that a quartz cover (101) is arranged above the reaction chamber (100); the lower part of the reaction chamber (100) is provided with a support platform (102) used for placing a silicon slice sample to be processed; the gas flow control device (110) comprises no less than two gas circuits (111), and working gas can be introduced into the gas circuits; the pressure intensity regulation and control device (140) comprises an air outlet (141), a mechanical pump (142) and a molecular pump (143); and the cooling device (150) is directly connected to the support platform (102). The device can be used for preparing the black silicon with high density and width-depth ratio, and is high in preparation efficiency, low in cost and automatic, simple and convenient in control.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to the field of micro-nano processing technology, and in particular to a device for preparing black silicon. Background technique [0002] Black silicon is a revolutionary new material structure in the electronics industry. Compared with the general silicon material structure, black silicon has a strong ability to absorb light. Its preparation began in 1998 with the femtosecond laser experiment conducted by Professor Eric Mazur of Harvard University. In the experiment, Professor Eric Mazur scanned the silicon wafer with an ultra-intense and ultra-short-time laser beam (femtosecond laser), forming a forest-like nanoscale cone-shaped surface on the silicon wafer surface. The surface structure of this nano-forest has a light absorption rate of more than 90% in almost the entire solar spectrum range, which greatly expands the spectral absorption range of silicon-based materia...

AI Technical Summary

Problems solved by technology

[0005] However, in traditional plasma processing equipment, the general process parameter setting is manual operation, which is difficult to control accurately; the inlet pipe is shared, and different working gases are mixed before entering the reaction chamber, which is especially not suitable for black silicon that requires alternate gas inlet. Manufacturing process; lack of effective wafer cooling

Therefore, conventional plasma processing equipment cannot properly handle changes in process conditions due to the aforementioned problems, and thus cannot achieve high density and uniform distribution of plasma

In particular, with the recent gradual increase in the size of the wafer process line, it is more difficult for conventional plasma processing equipment to maintain the uniformity of black silicon prepared within the wafer range.

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