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Preparation method of multi-luminous-region luminous Ag, Ga and N doping ZnO film

A thin film and diaphragm technology, applied in the field of ZnO thin film preparation, can solve the problems of weak luminous intensity and few luminous areas, and achieve the effect of increasing luminous intensity and improving luminous intensity

Inactive Publication Date: 2013-12-11
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims to solve the technical problems of weak luminous intensity and few luminous regions of the existing single-doped ZnO thin film, and provides a preparation method for multi-light-emitting Ag, Ga, N-doped ZnO thin films

Method used

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  • Preparation method of multi-luminous-region luminous Ag, Ga and N doping ZnO film
  • Preparation method of multi-luminous-region luminous Ag, Ga and N doping ZnO film
  • Preparation method of multi-luminous-region luminous Ag, Ga and N doping ZnO film

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specific Embodiment approach 1

[0016] Embodiment 1: The Ag, Ga, N-doped ZnO thin film with multi-light region light emission in this embodiment is sputtered a layer of Ag, Ga, N co-doped ZnO thin film on the substrate.

[0017] In the present embodiment, the Ag, Ga, and N-doped ZnO thin film with multi-light regions emits light, and the Ag, Ga, and N double-acceptor-donor co-doped ZnO thin film is magnetron sputtered on the substrate, and the doping elements Ga and N Regulate and control the luminescence of ZnO thin films in the violet light band, and the doping of Ag increases the concentration of excitons on the one hand, promotes the formation of Oi, thereby effectively increasing the luminescence intensity of ZnO thin films in the ultraviolet and visible light regions, on the other hand The concentration of neutral donor-bound excitons in the ZnO film was increased, and a luminescence peak at 3.359eV was obtained in the low-temperature photoluminescence spectrum. When doping, due to the high formation e...

specific Embodiment approach 2

[0018] Embodiment 2: This embodiment is different from Embodiment 1 in that the substrate is silicon or quartz glass. Others are the same as in the second embodiment.

specific Embodiment approach 3

[0019] Specific implementation mode three: the preparation method of the multi-light area luminescent Ag, Ga, N-doped ZnO thin film of the present embodiment is carried out according to the following steps:

[0020] 1. Preparation of target material: Weigh 99.1%~99.6% ZnO powder and 0.9%~0.4% Ga 2 o 3 Mix the powder evenly, add it into the mold, and press it for 4-6 hours at a temperature of 1000°C-1300°C and a pressure of 5-20MPa to obtain a ceramic sheet with a diameter of 60mm-100mm and a thickness of 3mm-5mm. The Ag sheet, which accounts for 1% to 2% of the area of ​​the ceramic sheet, is attached to the center of the ceramic sheet to obtain the target; the purity of the ZnO powder is ≥99.99%, the particle size is 0.2 μm to 2 μm, and the Ga 2 o 3 The purity of the powder is ≥99.99%, and the particle size is 0.2μm~2μm;

[0021] 2. Put the target and substrate prepared in step 1 into a radio frequency magnetron sputtering coating machine, wherein the distance between the ...

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Abstract

The invention provides a multi-luminous-region luminous Ag, Ga and N doping ZnO film and a preparation method of the multi-luminous-region luminous Ag, Ga and N doping ZnO film and relates to a ZnO film and a preparation method of the ZnO film. The invention aims at solving the technical problems of few luminous regions and weak luminous intensity of the existing single-doping ZnO film. The multi-luminous-region luminous Ag, Ga and N doping ZnO film provided by the invention is characterized in that a layer of Ag, Ga and N co-doping ZnO film is sputtered on a substrate. A method comprises the following steps that: ZnO powder and Ga2O3 powder are subjected to hot pressing to become ceramic sheets, and then, Ag is pasted to obtain target materials; the target materials and the substrate are placed into a radio frequency magnetron sputtering film coating machine, a sputtering chamber is subjected to vacuum pumping, then, mixed gas of N2 and O2 is introduced into the sputtering chamber, the film is obtained through the sputtering, the film is subjected to annealing, and then, the multi-luminous-region luminous Ag, Ga and N doping ZnO film is obtained. The film can be luminous respectively in an ultraviolet light region, a purple light region and a red orange light region and can be used in the field of photoelectric devices.

Description

technical field [0001] The invention relates to a preparation method of ZnO thin film. Background technique [0002] ZnO is a wide bandgap (3.37eV) direct bandgap semiconductor. Its free exciton binding energy (60emV) is higher than the thermal ionization energy (25meV) at room temperature. High-temperature exciton recombination luminescence, so ZnO semiconductor thin film has broad application prospects in the field of optoelectronic devices, and its luminescence range is wide. ZnO prepared under different conditions can be observed from ultraviolet light to visible light at room temperature. The red-orange light in the medium ranges from 370nm to 700nm, so the single-material ZnO can realize its application in ultraviolet and white light-emitting devices, and the luminous peak position and luminous intensity of ZnO can be effectively adjusted by doping. However, single-doped ZnO has disadvantages such as low doping concentration, weak luminous intensity, and few luminesce...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/04C23C14/35C23C14/58
Inventor 孟祥龙林倩茹雷黎蔡伟
Owner HARBIN INST OF TECH