Method for preparing less layer graphene sheet

A technology of few-layer graphene and graphene sheets, which is applied in the field of rapid and high-yield preparation of few-layer graphene sheets, which can solve the problems of low graphene concentration, complicated process, and long time, and achieve high quality and high conductivity Effect

Inactive Publication Date: 2012-08-08
CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this preparation method is complex, takes too long, and the concentration of graphene in the product is relatively low, and this pr

Method used

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  • Method for preparing less layer graphene sheet
  • Method for preparing less layer graphene sheet
  • Method for preparing less layer graphene sheet

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment approach 1

[0018] Weigh 50 mg of graphite powder in a reaction vessel, and under stirring, first slowly add 10 grams of chlorosulfonic acid into the graphite powder, and continue stirring for five minutes to uniformly mix the graphite powder and chlorosulfonic acid. Then, under the condition of not stopping stirring, the hydrogen peroxide of 4 grams is slowly added in the mixed solution of graphite powder and chlorosulfonic acid. By centrifuging at 12000rpm and washing 3 times with double distilled water, the purpose is to remove excess acid solution, and the product obtained after centrifugal washing is redispersed in chlorosulfonic acid after freezing (minus 40 degrees Celsius) and drying under vacuum conditions to obtain Dispersions. The dispersion was centrifuged again at 1500 rpm to remove unexfoliated graphite and partially exfoliated graphite deposited at the bottom, thereby obtaining high-quality few-layer graphene sheets with a yield of 75%.

[0019] figure 1 It is the digital...

specific Embodiment approach 2

[0023] Weigh 50 mg of graphite powder in a reaction vessel, and under stirring, first slowly add 7.5 grams of chlorosulfonic acid into the graphite powder, and continue stirring for five minutes to uniformly mix the graphite powder and chlorosulfonic acid. Then, under the condition of not stopping stirring, the hydrogen peroxide of 4 grams is slowly added in the mixed solution of graphite powder and chlorosulfonic acid. By centrifuging at 12000rpm and washing 3 times with double distilled water, the purpose is to remove excess acid solution, and the product obtained after centrifugal washing is redispersed in chlorosulfonic acid after freezing (minus 40 degrees Celsius) and drying under vacuum conditions to obtain For the dispersion liquid, the obtained dispersion liquid was centrifuged again at 1500 rpm to remove unexfoliated graphite and partially exfoliated graphite deposited at the bottom, thereby obtaining high-quality few-layer graphene with a yield of 74%.

[0024] Fi...

specific Embodiment approach 3

[0025]Weigh 50 mg of graphite powder in a reaction vessel, and under stirring, first slowly add 5 grams of chlorosulfonic acid into the graphite powder, and continue stirring for five minutes to uniformly mix the graphite powder and chlorosulfonic acid. Then, under the condition of not stopping stirring, the hydrogen peroxide of 4 grams is slowly added in the mixed solution of graphite powder and chlorosulfonic acid. By centrifuging at 12000rpm and washing 3 times with double distilled water, the purpose is to remove excess acid solution, and the product obtained after centrifugal washing is redispersed in chlorosulfonic acid after freezing (minus 40 degrees Celsius) and drying under vacuum conditions to obtain For the dispersion liquid, the obtained dispersion liquid was centrifuged again at 1500 rpm to remove unexfoliated graphite and partially exfoliated graphite deposited at the bottom, thereby obtaining high-quality few-layer graphene with a yield of 75%.

[0026] Figur...

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Abstract

The invention discloses a method for preparing a less layer graphene sheet, which belongs to the field of preparation of graphene and is used for overcoming the technical defects existing in the conventional method including long time in a preparation process, low yield, unsuitability for large-scale production and the like. The invention provides a method for preparing a less layer graphene sheet rapidly on a large scale at high yield. The method comprises the following steps of: adding chlorosulfonic acid and hydrogen peroxide into graphite powder respectively; and centrifuging, washing with water and performing vacuum drying and secondary centrifuging to obtain the less layer graphene sheet. The method has the beneficial effect that: a foundation is laid for the future large-scale production of graphene sheets. High-yield graphene can be obtained from graphite powder successfully and rapidly by using chlorosulfonic acid and hydrogen peroxide serving as stripping reagents, the graphene consists of a single layer or less layer graphene sheet, and the graphene is not oxidized into a graphene oxide in a preparation process; and the less layer graphene sheet has the excellent properties of single dispersion, high quality and high conductivity (2.4*104 S/m).

Description

technical field [0001] The invention belongs to the field of graphene preparation. Specifically, the invention relates to a method for preparing few-layer graphene sheets with high yield and fast speed. Background technique [0002] Graphene is a two-dimensional material with a hexagonal honeycomb lattice composed of carbon atoms in sp2 hybridized orbitals and a thickness of only one carbon atom. [0003] Graphene is currently the thinnest but also the hardest nanomaterial in the world. It is almost completely transparent and only absorbs 2.3% of light; its thermal conductivity is as high as 5300W / m·K, which is higher than that of carbon nanotubes and diamonds. Electron mobility* over 15000cm 2 / V·s is higher than carbon nanotubes or silicon crystals, and the resistivity is only about 10-6Ω·cm, which is lower than copper or silver. It is the material with the lowest resistivity in the world. Because of its extremely low resistivity, electrons run extremely fast, so it is e...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/184
Inventor 卢文卜邢志财王磊
Owner CHANGCHUN INST OF APPLIED CHEMISTRY - CHINESE ACAD OF SCI
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