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Normally-off semiconductor switches and normally-off JFETs

A semiconductor and switch technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of SiO2 long-term stability and defect density unsatisfactory, high on-resistance, low charge carrier mobility, etc.

Active Publication Date: 2015-04-01
INFINEON TECH AUSTRIA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the proximity to SiC and the widely used gate oxide SiO 2 Low charge carrier mobility at the interface between (silicon dioxide), SiC (silicon carbide) normally-off operating power MOSFETs (metal-oxide-semiconductor field-effect transistors) achieved so far typically have relatively high on-resistance
Furthermore, when used as gate oxide on SiC, SiO 2 The long-term stability and defect density are usually unsatisfactory

Method used

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  • Normally-off semiconductor switches and normally-off JFETs
  • Normally-off semiconductor switches and normally-off JFETs
  • Normally-off semiconductor switches and normally-off JFETs

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Embodiment Construction

[0021] Reference will now be made in detail to various embodiments, examples of which are illustrated in the accompanying drawings. Each example is provided by way of explanation and is not meant to be limiting of the invention. For example, features illustrated or described as part of one embodiment can be used on or in combination with features of other embodiments to yield yet a further embodiment. It is intended that the present invention includes such modifications and variations. For the sake of clarity, the same elements or manufacturing steps are denoted by the same reference symbols in different drawings, if not stated otherwise.

[0022] When used in this specification, the term "horizontal" is intended to describe an orientation substantially parallel to a first or main horizontal surface of a semiconductor substrate or body. This can be, for example, the surface of a wafer or a die.

[0023] When used in this specification, the term "vertical" is intended to des...

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Abstract

A normally-off JFET is provided. The normally-off JFET includes a channel region of a first conductivity type, a floating semiconductor region of a second conductivity type adjoining the channel region, and a contact region of the first conductivity type adjoining the floating semiconductor region. The floating semiconductor region is arranged between the contact region and the channel region. Further, a normally-off semiconductor switch is provided.

Description

technical field [0001] The present invention relates generally to normally-off semiconductor switches, in particular to wide bandgap field-effect semiconductor switches, and more particularly to normally-off JFETs (Junction Field Effect Transistors). Background technique [0002] Many functions of modern devices in automotive, consumer and industrial applications such as computer technology, mobile communication technology, converting electrical energy and driving electric motors or machines rely on field-effect semiconductor devices. [0003] The energy efficiency of eg power converters and motor drives depends on the performance of typically used power semiconductor devices, especially the on-resistance (Ron). Furthermore, normally-off operating semiconductor devices are often desired for safety reasons. Normally-off operation also reduces the overall power consumption of the semiconductor device because no static drive power is required. [0004] For silicon DMOS (doubl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/808H01L29/06
CPCH01L29/41758H01L29/808H01L29/42316H01L29/8083H01L29/1066
Inventor W.韦尔纳
Owner INFINEON TECH AUSTRIA AG