Method for removing top chamfering of BD-R (Blue Dish-Ray) mother disc groove
A technology of grooves and master discs, which is applied in the field of BD-R master disc processing technology, can solve the problems of fast developing speed, easy chamfering structure, slow down, etc., and achieve the effect of low roughness and improved quality
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Embodiment 1
[0039] A method for removing the top chamfer of the BD-R master groove in this embodiment includes the following steps:
[0040] (1) Prepare the substrate to be recorded
[0041] a. Clean the glass substrate;
[0042] b. Spin coating primer on the glass substrate, the speed of primer spin coating is 5-10 rpm, the material of primer is disilane and water, and the volume percentage concentration of primer is 0.8%;
[0043] c. Make the glass substrate that has been spin-coated with the primer static, and the part of the lower layer of the primer that is in contact with the glass substrate reacts with the glass substrate to form a film with a molecular layer thickness. The reaction time of the primer is 30 seconds;
[0044] d. Rotate and dry the glass substrate until all the water in the primer is thrown out. Generally, the drying time is not less than 200 seconds; the rotation speed of the glass substrate is 1500-2000 rpm;
[0045] E, spin-coating the photoresist with a thickne...
Embodiment 2
[0059] The steps are the same as in Example 1, except that the volume percent concentration of the primer is 0.6%, the reaction time of the primer is 34s, and the coating thickness of the photoresist is 30 nanometers. The drying time is not less than 200 seconds, the drying temperature is 85° C., and the recording power of the laser is 28 milliwatts.
Embodiment 3
[0061] The steps are the same as in Example 1, except that the volume percentage concentration of the primer is 1.0%, the reaction time of the primer is 28s, the drying time is not less than 200 seconds, and the photoresist The coating thickness is 20 nm, the drying temperature is 93° C., and the recording power of the laser is 20 mW.
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