Method and device for controlling seed crystal melting degree through gas flow in single crystal casting process

An air flow control and seed crystal technology, applied in chemical instruments and methods, single crystal growth, crystal growth and other directions, can solve the problems of bottom seed crystal melting, high heater power, and difficulty in precise changes, and achieve the seed crystal melting speed. The effect of slowing down, reducing heat fluctuations, and effective melting degree

Active Publication Date: 2012-10-03
HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
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Problems solved by technology

The heater power of the ingot furnace is generally large, and the temperature field of the ingot furnace is a large inertia system. A slight fluctuation in temperature will cause a large change in the heat in the temperature field of the ingot furnace. Therefore, the heat generation of the heater is controlled by the temperature change. The change is very difficult, and it is easy to cause too much heat to completely melt the bottom seed crystal, which is one of the reasons why the seed crystal is still completely melted in the current production process of monocrystalline silicon ingots

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  • Method and device for controlling seed crystal melting degree through gas flow in single crystal casting process
  • Method and device for controlling seed crystal melting degree through gas flow in single crystal casting process

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Embodiment Construction

[0026] In order to make the present invention easier to understand, the purpose, features and advantages are more prominent, below in conjunction with examples and accompanying figure 1 for further clarification.

[0027] A device that controls the degree of melting of the seed crystal through the airflow during the process of casting a single crystal, such as figure 1 As shown, it includes a polycrystalline ingot casting furnace, and the polycrystalline ingot casting furnace is provided with a heat insulation cage 2, and the top of the heat insulation cage is provided with a graphite air duct 1 leading to a protective gas in the furnace, and the heat insulation cage 2 is equipped with a temperature control thermocouple 4, and the bottom of the polycrystalline ingot casting furnace is provided with a thermocouple 5 at the bottom of the directional solidification block

[0028] A seed crystal layer 3 is laid on the bottom of the crucible in the furnace body, and polysilicon ma...

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Abstract

The invention discloses a method and a device for controlling seed crystal melting degree through a gas flow in a single crystal casting process. In order to prevent full melting of seed crystals, slow smelting of the seed crystals is realized by utilizing heat brought by a gas flow but not the heat of a heater using the method at a seed crystal smelting stage of a single crystal silicon ingot casting process by controlling the variation in protective gas flow, so that the seed crystal smelting degree is accurately controlled, incomplete smelting of bottom seed crystals is guaranteed, and a single crystal silicon ingot is normally produced.

Description

technical field [0001] The invention relates to an air flow control method and device for controlling the melting degree of a seed crystal in the process of casting a single crystal. Background technique [0002] At present, solar cells are mainly manufactured by monocrystalline silicon wafers and polycrystalline silicon wafers. Among them, monocrystalline silicon wafers have the characteristics of less grain boundaries, low impurities, and high minority carrier life, and high light absorption and conversion efficiency; while polycrystalline silicon wafers are due to grain boundaries. There are many impurities and high impurities, and the light absorption and conversion efficiency of the textured surface is 1%-2% lower than that of single crystal silicon. Monocrystalline silicon is mainly produced by the Czochralski method (Cz method), which has a low single-feeding amount, high control process requirements, and high product costs; while polycrystalline silicon is mostly pr...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B11/00
Inventor 杨晓生陈国红贾京英瞿海斌李佳段金刚
Owner HUNAN RED SUN PHOTOELECTRICITY SCI & TECH
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