Two-beam interference photoetching method and system

A technology of double-beam interference and interference exposure, applied in the field of interference lithography, can solve the problems of long chemical etching processing time, limited processing format, cumbersome process, etc., and achieve the effect of low cost, high processing efficiency and smooth step surface

Inactive Publication Date: 2012-10-10
SUZHOU UNIV
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Problems solved by technology

The main disadvantages of this method are: 1. More than two steps need to be engraved multiple times, and the process is cumbersome; 2. The processing time of chemical etching is very long and the efficiency is low; 3. Chemical etching requires a vacuum environment. The volume limit, its processing format is very limited
[0014] In short, the existing processing methods cannot directly, efficiently and cost-effectively produce large-format precision multi-step structures

Method used

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  • Two-beam interference photoetching method and system

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Embodiment Construction

[0038] The present invention proposes a processing method based on interference lithography and multiple exposure superposition, the basic idea is to use interference lithography to obtain a light intensity distribution close to the ideal cosine type, and then make the cosine type light intensity dislocation through multiple exposures Superposition, so that the total light intensity distribution is a horizontal straight line, so as to obtain a flat-topped stepped structure.

[0039] In order to achieve the above purpose, the embodiment of the present invention discloses a double-beam interference lithography method. The two beams realize N times of interference exposure on the surface of the workpiece, and the misalignment value between two adjacent exposure positions is d I / N, where, N≥2, d I is the period of the light intensity distribution after exposure, and the complex amplitude distribution of the light field after the interference of the two beams is a cosine function....

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Abstract

The invention discloses a two-beam interference photoetching method and a two-beam interference photoetching system. The method comprises the following step of: realizing N times of interference exposure of two paths of beams on the surface of a processed workpiece, wherein the staggering value between two adjacent exposure positions is dI / N; N is more than or equal to 2; dI is the period of exposed light strength distribution; and the light field complex amplitude distribution after interference of the two paths of beams is a cosine function. According to the two-beam interference photoetching method disclosed by the invention, a big-width precision multi-step structure can be directly prepared on a photoresist, and the processing efficiency is high; and moreover, an adopted device is easy to obtain, and is low in cost.

Description

technical field [0001] The invention belongs to the field of interference lithography, and in particular relates to a double-beam interference lithography method and system. Background technique [0002] Multi-step structure is a typical and basic three-dimensional structure, which is widely used in many fields such as semiconductor, micro-optic device, micro-electromechanical system (MEMS) and flat panel display. In these applications, the requirements for the number of steps, dimensional accuracy and surface roughness of the multi-step structure are very low: the number of steps is generally 2 to 4 steps, and the accuracy of the height of the steps is required to be about a few tenths of a micron to a few microns, and the surface of the steps The roughness is required to be about a few tenths of a micron. In terms of processing methods, it can be realized by various methods such as mask lithography and laser direct writing. [0003] However, for some special application ...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/20
Inventor 胡进浦东林
Owner SUZHOU UNIV
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