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A vdmos device and its manufacturing method

A manufacturing method and device technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of VDMOSFET device area enlargement, on-resistance increase, etc., achieve capacitance reduction, increase recovery speed, The effect of increasing the switching speed

Active Publication Date: 2015-08-26
BYD SEMICON CO LTD
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Problems solved by technology

[0007] The present invention solves the problems in the prior art that the area of ​​the VDMOSFET device becomes larger and the on-resistance increases due to the integrated Schottky contacts of the two unit cells of the VDMOSFET, thereby providing a method that can improve the recovery speed of the body diode of the VDMOSFET The VDMOSFET device and its manufacturing method can not increase the on-resistance of the device and can ensure the withstand voltage of the device

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  • A vdmos device and its manufacturing method
  • A vdmos device and its manufacturing method
  • A vdmos device and its manufacturing method

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Embodiment Construction

[0020] In order to make the technical problems, technical solutions and beneficial effects solved by the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0021] figure 2 It is a schematic diagram of the structure of a VDMOS device according to the first embodiment of the present invention; a VDMOS device is disclosed, including: a substrate 10 of the first conductivity type, with a drain D disposed on the back thereof; a drift region 11 of the first conductivity type, disposed on the first On the conductive type substrate 10; the second conductive type well region 12, which is selectively formed in the surface area of ​​the first conductive type drift region 11, is opposite to the conductivity type of the first conductiv...

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Abstract

The invention discloses a VDMOS device and a manufacturing method thereof. The VDMOS device comprises: a first conductivity-type substrate provided with a drain electrode on the back side; a first conductivity-type drift region arranged on the first conductivity-type substrate; a second conductivity-type well region being selectively formed on the surface region of the first conductivity-type drift region and having a conductivity type opposite to that of the first conductivity-type drift region; a first conductivity-type source region provided in the second conductivity-type well region; a grid electrode positioned on the first conductivity-type drift region and partially covering the second conductivity-type well region and the first conductivity-type source region; and a Schottky contact provided on the first conductivity-type drift region and positioned in the grid electrode region. The Schottky contact is formed on the first conductivity-type drift region and positioned in the grid electrode region, so that recovery speed of body diodes included in the VDMOS device structure is improved without increases in total dimension and on-resistance of the device.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor devices, in particular to a VDMOS device and a manufacturing method thereof. Background technique [0002] Power metal-oxide-semiconductor long-effect transistor (Power MOSFET) structure has a wide range of applications in a very wide range of fields due to its special functions, such as disk drives, automotive electronics, and power devices. Take power devices as an example, such as VDMOS (Vertical double-diffused metal oxide semiconductor, vertical double-diffused MOS) VLSI devices applied to power devices, with small switching loss, high input impedance, low driving power, good frequency characteristics, etc. The advantages are widely used. [0003] An ideal diode is cut off when it is subjected to a reverse voltage, and no reverse current will flow. When the actual diode is forward-conducting, the charge in the PN junction is accumulated. When the diode is subjected to a reverse vo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/47H01L21/336
Inventor 朱超群钟树理任文珍曾爱平陈宇
Owner BYD SEMICON CO LTD
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