Semiconductor device and data generation method
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- RENESAS ELECTRONICS CORP
- Publication Date
- 2012-10-17
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Abstract
Description
[0001] Cross References to Related Applications
[0002] The disclosure of Japanese Patent Application No. 2011-089080 filed on Apr. 13, 2011 including specification, drawings and abstract is hereby incorporated by reference in its entirety. technical field
[0003] The present invention relates to a semiconductor device provided with a temperature sensor and a data generation method for the semiconductor device, and particularly relates to a technique that is effective when applied to a semiconductor device requiring highly accurate temperature detection. Background technique
[0004] In recent years, there has been an increasing demand for microcomputers operating at relatively high temperatures for vehicle engine control. Along with this demand, there is also a high demand for mounting temperature sensors in microcomputers. Since vehicle engines operate at very high temperatures, the installed temperature sensors are especially required to perform high-precision temperat...