Semiconductor device and data generation method

A technology for semiconductors and devices, applied in the field of semiconductor devices and data generation, can solve the problems of reducing the accuracy of temperature detection, and achieve the effect of improving the accuracy of temperature detection and suppressing the number of

Active Publication Date: 2012-10-17
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This fact is also one of the factors that reduce the accuracy of temperature detection

Method used

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  • Semiconductor device and data generation method
  • Semiconductor device and data generation method
  • Semiconductor device and data generation method

Examples

Experimental program
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Embodiment 1

[0100] figure 1 is a block diagram showing an example of a microcomputer with a built-in temperature sensor for performing data processing on a vehicle, etc., as one embodiment of a semiconductor device according to the present invention. Although not specifically limited, the figure 1 The microcomputer 1 shown in is formed on a semiconductor substrate (for example, single crystal silicon) by a well-known CMOS integrated circuit manufacturing technique.

[0101] The microcomputer 1 includes a central processing unit (CPU) 30, a temperature sensor 10, a transfer control unit (DMAC (Direct Memory Access Controller)) 40, a memory unit 50, a bus 20, and other peripheral circuits (not shown). The CPU 30 executes engine control and the like of the vehicle and processes data and the like used for the related controls. The CPU 30 causes the temperature sensor 10 to perform temperature measurement by supplying a temperature detection instruction from the bus 20 .

[0102] The memory...

Embodiment 2

[0181] Figure 18 is a block diagram showing an example of a microcomputer with a built-in temperature sensor for performing data processing and the like on a vehicle according to Embodiment 2. Although not specifically limited, the Figure 18 The microcomputer 2 shown in is formed on a semiconductor substrate (for example, single crystal silicon) by a well-known CMOS integrated circuit manufacturing technique.

[0182] As described above, in order to improve the accuracy of the temperature sensor 12, it is necessary to calculate the correction operation coefficient a n -a 0 and perform correction operations. However, it is necessary to test the operation of each function block in the previous stage and check the presence or absence of operation abnormality. Therefore, in order to facilitate the operation test of each function block, the microcomputer 2 according to Embodiment 2 further includes function blocks for operation test in addition to the functions provided in th...

Embodiment 3

[0192] Figure 19 is a block diagram showing an example of a microcomputer with a built-in temperature sensor for performing data processing and the like on a vehicle according to Embodiment 3. Although not specifically limited, the Figure 19 The microcomputer 3 shown in is formed on a semiconductor substrate (for example, single crystal silicon) by a well-known CMOS integrated circuit manufacturing technique.

[0193] In addition to the functions provided in the microcomputer 2 according to Embodiment 2, the microcomputer 3 is also provided with a function for switching the correction operation function according to the temperature range. Specifically, the microcomputer 3 further includes a comparator 123 for determining the temperature range. exist Figure 19 In , the same symbols are attached to the same components as in the microcomputers 1 and 2, and detailed description thereof is omitted.

[0194] As described above, in order to improve the accuracy of the temperat...

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Abstract

The invention provides a semiconductor device and a data generation method. Improvement in the accuracy of a temperature sensor is aimed at, suppressing the number of the test temperature in a test process. The semiconductor device comprises a coefficient calculation unit which calculates up to the N-th order coefficient (N is an integer equal to or greater than one) of a correction function as an N-th order approximation of a characteristic function indicating correspondence relation of temperature data measured by a temperature sensor unit and temperature, based on N+1 pieces of the temperature data including a theoretical value at a predetermined temperature in the characteristic function and N measured values of the temperature data measured by the temperature sensor unit at N points of temperature; and a correction operation unit which generates data including information on temperature, by performing calculation using the correction function to which the coefficients calculated are applied, based on temperature data measured by the temperature sensor unit.

Description

[0001] Cross References to Related Applications [0002] The disclosure of Japanese Patent Application No. 2011-089080 filed on Apr. 13, 2011 including specification, drawings and abstract is hereby incorporated by reference in its entirety. technical field [0003] The present invention relates to a semiconductor device provided with a temperature sensor and a data generation method for the semiconductor device, and particularly relates to a technique that is effective when applied to a semiconductor device requiring highly accurate temperature detection. Background technique [0004] In recent years, there has been an increasing demand for microcomputers operating at relatively high temperatures for vehicle engine control. Along with this demand, there is also a high demand for mounting temperature sensors in microcomputers. Since vehicle engines operate at very high temperatures, the installed temperature sensors are especially required to perform high-precision temperat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01K7/01
CPCG01K7/01G01K15/005G05F3/30
Inventor 有坂直也伊藤崇泰堀口真志
Owner RENESAS ELECTRONICS CORP
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