Silicon carbide substrate
A silicon carbide substrate and silicon carbide technology, applied in chemical instruments and methods, single crystal growth, semiconductor devices, etc., can solve problems such as inability to reduce warpage, exposure failure, etc., and achieve the effect of suppressing warpage
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
no. 1 example
[0060] First, refer to figure 1 with figure 2 One embodiment of the present invention, ie, the first embodiment, is described. figure 1 corresponds to along figure 2 The cross-sectional view taken along the line I-I. refer to figure 1 with figure 2 , the silicon carbide substrate 1 in this embodiment includes: a foundation layer 10 made of silicon carbide; and a plurality of SiC layers 20 arranged side by side on the foundation layer 10 when viewed in plan view and composed of made of crystalline silicon carbide. In other words, a plurality of SiC layers 20 are arranged along main surface 10A of base layer 10 . A gap 60 is formed between end surfaces 20B of adjacent SiC layers 20 .
[0061] In silicon carbide substrate 1 of the present embodiment, gap 60 is thus formed between SiC layers 20 . Therefore, even when different types of material layers are formed on the SiC layer 20, the gap 60 provides a buffer effect to reduce warpage. As a result, silicon carbide sub...
no. 2 example
[0084] Another embodiment of the present invention, ie, the second embodiment, will be described below. refer to figure 1 , silicon carbide substrate 1 in the second embodiment basically has the same structure as silicon carbide substrate 1 in the first embodiment and basically provides the same effects. However, silicon carbide substrate 1 in the second embodiment is different from silicon carbide substrate 1 in the first embodiment in the manufacturing method.
[0085] refer to Figure 4 , in the method for manufacturing silicon carbide substrate 1 in the second embodiment, a substrate preparation step is first performed as a step ( S10 ). In the step ( S10 ), a SiC substrate is prepared as in the first embodiment, and a material substrate made of silicon carbide is prepared.
[0086] Next, refer to Figure 4 , a close-to-arrangement step is performed as a step (S31). In this step (S31), refer to Figure 5 , the plurality of SiC substrates 20 and material substrate 11 ...
no. 3 example
[0089] Still another embodiment of the present invention, that is, the third embodiment is described below. refer to Figure 8 , silicon carbide substrate 1 in the third embodiment has substantially the same configuration as silicon carbide substrate 1 in the first embodiment and provides substantially the same effects. However, silicon carbide substrate 1 in the third embodiment differs from silicon carbide substrate 1 in the first embodiment in that an amorphous substrate serving as an intermediate layer is provided between base layer 10 and each SiC layer 20 . SiC layer 40 .
[0090] That is, in silicon carbide substrate 1 in the third embodiment, amorphous SiC layer 40 is provided between foundation layer 10 and SiC layer 20 as an intermediate layer made of amorphous SiC. Then, base layer 10 and SiC layer 20 are connected to each other through this amorphous SiC layer 40 . Amorphous SiC layer 40 thus present easily provides silicon carbide substrate 1 in which base laye...
PUM
| Property | Measurement | Unit |
|---|---|---|
| width | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More