Silicon ingot slicing quality monitoring system and monitoring method

A quality monitoring and slicing technology, used in radiation pyrometry, measuring devices, optical radiation measurement, etc. control and other issues, to achieve the effect of improving the quality and efficiency of silicon wafers, reducing line marks, and high slicing quality

Inactive Publication Date: 2012-10-24
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, it is difficult to clearly explain the causes of cracked half-sections and chipped edges and corners that are randomly generated during the slicing process, and it is even more difficult to effectively control them. This shows that there are still some important parameters that affect the quality of slicing in the current slicing system. have not yet been effectively monitored and controlled

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  • Silicon ingot slicing quality monitoring system and monitoring method
  • Silicon ingot slicing quality monitoring system and monitoring method
  • Silicon ingot slicing quality monitoring system and monitoring method

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Embodiment Construction

[0015] The present invention will now be further described in conjunction with the accompanying drawings and preferred embodiments. These drawings are all simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner, so they only show the configurations related to the present invention.

[0016] Such as figure 1 , figure 2 The silicon ingot slicing quality monitoring system shown includes a slicing device, a detection device for detecting the temperature at the cutting point of the crystal ingot, and a control device with a central processing unit.

[0017] The slicing device includes the inner wall plate 1 of the slicer. One side of the inner wall plate 1 has the crystal bar 2 to be cut, the crystal holder 3 sticking the crystal bar 2, a pair of guide wheels 4 located below the crystal bar 2 and the The steel wire mesh 5 used for grinding the ingot 2 between 4; the detection device includes the infrared sensor 6 lo...

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Abstract

The invention discloses a silicon ingot slicing quality monitoring system and a monitoring method. The silicon ingot slicing quality monitoring system comprises a slicing device, a detection device for detecting temperature at a crystal bar cutting part, and a control device with a central processing unit. The slicing device comprises an inner wall plate of a slicer. A crystal bar to be cut, a crystal tray for bonding the crystal bar, a pair of guide wheels below the crystal bar and a steel wire net for grinding the crystal bar winded between the guide wheels are arranged on one side of the inner wall plate. The detection device comprises an infrared sensor arranged on the inner wall plate. The infrared sensor is connected with a temperature inductive circuit through a transmission line. The extending direction of a central line of a probe of the infrared sensor is aligned with a middle position of the steel wire net which grinds the end surfaced of the crystal bar. The temperature inductive circuit transmits the collected data to the central processing unit after the data is processed. According to the silicon ingot slicing quality monitoring system and the monitoring method provided by the invention, the slicing process can be effectively controlled, and deficiencies such as crack edge, half piece, and rubber-faced broken piece with unfilled corner generated randomly in the slicing process are reduced, thereby realizing more stable slicing quality and higher slicing benefit.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to a silicon ingot slicing quality monitoring system and a method for monitoring the silicon ingot slicing quality using the system. Background technique [0002] At present, there are two main methods for slicing single-polycrystalline ingots: one is to use structural steel wires to drive high-speed running of structural steel wires to drive diamonds suspended in PEG to grind single-polycrystalline ingots to achieve slicing; the other is to directly use surface inlay or coating The high-speed movement of diamond wire with diamond-like high-hardness material grinds single polycrystalline crystal block to realize slicing. At present, the first method has obvious advantages in overall cost due to its relatively stable process, and this slicing method is adopted in domestic mass production. [0003] The most important auxiliary materials usually required for the first...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/04G05B19/04G01J5/00
Inventor 贺洁
Owner TRINA SOLAR CO LTD
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