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Polishing composition for improving surface quality of sapphire

A technology for polishing composition and surface quality, which is applied in the direction of polishing composition containing abrasives, etc. It can solve the problems of undisclosed ways to improve surface quality, and achieve the effects of improving smoothness, reducing roughness, and easy cleaning

Inactive Publication Date: 2012-11-14
WUHU HAISEN MATERIAL TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Similarly, Chinese patents 200810020779.8, 201010215841.6, 201010232141.8, and 200680007081.1 do not disclose methods for improving surface quality

Method used

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  • Polishing composition for improving surface quality of sapphire
  • Polishing composition for improving surface quality of sapphire

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Take 10kg of commercially available silica sol (Qingdao Yumin, the same below), concentration 40%, particle size 60nm, add deionized water to dilute to 20kg, add 20g potassium carbonate, adjust the pH value to 10.8 with 10% KOH solution, ultrasonicate and stir 5 minutes; add 400g NaCl, sonicate and stir for 5 minutes; add 0.4g hydroxyethyl cellulose, sonicate and stir for 5 minutes.

[0021] Polish using a speedfam SPAW model 32 polisher. Pressure 300g / cm 2 , speed 40rpm, temperature 36°C, polishing pad suba600. After polishing with (1000) sapphire for 2 hours, it was ultrasonically cleaned with deionized water for 10 minutes. The pit-shaped defects, point-like defects and roughness were observed by interference microscope and atomic force microscope, respectively. The results were 0 pit defects, 2 point defects and a roughness of 0.28 nm.

Embodiment 2

[0023] Take 10kg of commercially available silica sol, concentration 40%, particle size 60nm, add deionized water to dilute to 20kg, add 20g potassium carbonate, adjust the pH value to 10.6 with 5% NaOH solution and stir for 5 minutes; add 200g NaCl, sonicate and Stir for 5 minutes; add 0.4 g of polyvinyl alcohol, sonicate and stir for 5 minutes.

[0024] Polish using a speedfam SPAW model 32 polisher. Pressure 300g / cm 2 , speed 40rpm, temperature 36°C, polishing pad suba600. After polishing with (1000) sapphire for 2 hours, it was ultrasonically cleaned with deionized water for 10 minutes. Interference microscopy and atomic force microscopy were used to observe pit-shaped defects, point-like defects and roughness, respectively. The results were 0 pit defects, 0 point defects and a roughness of 0.16 nm.

Embodiment 3

[0026] Take 10kg of commercially available alumina solution, concentration 10%, particle size 60nm, add deionized water to dilute to 20kg, add 20g potassium carbonate, adjust pH value to 10.8 with 10% KOH solution, ultrasonic and stir for 5 minutes; add 20g KCl, Sonicate and stir for 5 minutes; add 0.2 g of hydroxyethyl cellulose, sonicate and stir for 5 minutes.

[0027] Polish using a speedfam SPAW model 32 polisher. Pressure 300g / cm 2 , speed 40rpm, temperature 36°C, polishing pad suba600. After polishing with (1000) sapphire for 2 hours, it was ultrasonically cleaned with deionized water for 10 minutes. The pit-shaped defects, point-like defects and roughness were observed by interference microscope and atomic force microscope, respectively. The results were 0 pit defects, 0 point defects and a roughness of 0.31 nm.

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Abstract

The invention discloses a polishing composition for improving surface quality of sapphire. The polishing composition comprises the following substances: an abrasive, a salt composition, organic components, a pH buffering agent, a pH regulator and water. Compared with the prior art, the polishing composition has the advantages that by addition of the organic components, the smoothness of the polished sapphire surface can be obviously improved, the roughness of the polished sapphire is reduced, and the polished surface is hydrophilic and is easily cleaned.

Description

technical field [0001] The invention relates to the technology of improving the ultra-high precision polishing of sapphire, which belongs to the field of chemical mechanical polishing. Background technique [0002] Sapphire is the main substrate material for making blue LEDs today. It is made of high-purity alumina through crystal pulling, slicing, chamfering, rough grinding, fine grinding, polishing and cleaning processes. Among them, polishing is to achieve a flat, low roughness, defect-free, and impurity-free surface. [0003] However, during the polishing process, various defects appear. This is closely related to the polishing process, polishing liquid, and machine conditions. Among them, the polishing liquid acts to corrode the surface of the sapphire, so the polishing liquid will affect the surface defects of the sapphire during and after polishing. In actual production, pit-shaped defects often appear on the surface of sapphire, which are polygonal in shape and h...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 朱满霞曹镇森董晓彤汤忠苗
Owner WUHU HAISEN MATERIAL TECH
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