Method for measuring and calculating semiconductor device well block implanted ion transverse diffusing capacity

Abstract

The invention discloses a method for measuring and calculating semiconductor device well block implanted ion transverse diffusing capacity. The method includes that step one, a test module is established, and an active area of the module includes a P well block and an N well block which are isolated by a shallow ridge channel; step two, a processing structure is simulated, and a tungsten connecting hole of the well block is arranged; step three, an ion implanting is performed, and the P well block or the N well block is merely implanted with a first ion; and step four, the test module is subjected to scanning to obtain a continuous-tone image of the tungsten connecting hole. The method has the advantages that references for well block optimization of the semiconductor device are provided, a guarantee is provided for increasing the yield, and the method is simple, convenient and easy to practice.

Description

technical field [0001] The invention belongs to the field of semiconductors, and relates to a method for measuring ion diffusion ability, in particular to a method for measuring the lateral diffusion ability of implanted ions in the well area of ​​a semiconductor device. Background technique [0002] The quality of the well area of ​​a semiconductor device plays a key role in the semiconductor device. When the device is below 55nm, the control of the well area is especially important. There are many factors that affect the well area of ​​semiconductor devices, such as the dose, depth, angle, and ion diffusion of implanted ions. However, due to the lack of an effective evaluation method for the ion's own diffusion ability, it is difficult to control its impact on the device. [0003] The ions implanted into the well area will diffuse along the damaged lattice during the subsequent lattice repair thermal annealing process, and most of them diffuse laterally. The lateral diff...

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Problems solved by technology

[0004] At present, the lateral diffusion of ions in the well area is mostly carried out through wafer acceptance test (wafer acceptance test, WAT) and electrical test. Since many subsequent processes will affect the results of WAT and electrical test, it is difficult to accurately measure its value. Lateral diffusion capability and increased process cycle time

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