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Thin film transistor pixel structure and thin film transistor display device

A thin-film transistor and pixel structure technology, applied in the field of electronic display, can solve the problems of increasing production process and manpower, alignment deviation, affecting product consistency, etc., to achieve the effect of saving production process and manpower, and ensuring consistency

Active Publication Date: 2015-04-29
SHANGHAI TIANMA MICRO ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there is a problem of alignment deviation in the formation process of different layer structures, such as Figure 4 As shown, when there is an offset ΔLa between the drain 8 and the gate 6 along the scanning line 12, the change in area of ​​the second overlapping region between the drain 8 and the gate 6 is W* ΔLa
In the prior art, the offset ΔLa can be controlled below 1.5 μm, while the channel width W of the thin film transistor is generally maintained above 30 μm, so the variation of the overlapping area between the drain and the gate may be as high as 45 μm 2 , has a great influence on the jump voltage of the pixel electrode
[0016] Therefore, in the above-mentioned prior art, there are the following disadvantages: for the same design, in actual production, due to the alignment deviation in the manufacturing process, the magnitude of the gate-drain parasitic capacitance of each product is different, that is, the common electrode layer of each product The compensation value required for the voltage may be different
Therefore, for electronic ink display devices, after the production is completed, it is necessary to individually modulate the voltage of the common electrode layer for each product, which increases the production process and manpower, and affects the consistency of the product.

Method used

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Embodiment Construction

[0044] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0045] In the following description, many specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways than those described here, so the present invention is not limited by the specific embodiments disclosed below.

[0046] As mentioned in the background technology section, due to the alignment deviation of the manufacturing process in the prior art, there are differences in the corresponding gate-to-drain parasitic capacitance between products of the same design, that is, the compensation value required for the common electrode layer voltage of each product may be different. the same. Therefore, for the electronic ink display device, it is necessary ...

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Abstract

The invention discloses a thin film transistor pixel structure and a thin film transistor display device. The thin film transistor pixel structure comprises a thin film transistor, a gate leakage parasitic capacitor and a compensation capacitor, wherein the thin film transistor comprises a grid, a source and a drain; the drain is positioned inside the boundary of the grid; the distance between each brim of the drain and corresponding brim of the grid is greater than or equal to a deflection threshold; the drain is electrically connected with the pixel electrode through a first lead; the gate leakage parasitic capacitor comprises a first electrode of the gate leakage parasitic capacitor, a first medium layer and a second electrode of the gate leakage parasitic capacitor; the compensation capacitor comprises a first electrode of the compensation capacitor, a second medium layer and a second electrode of the compensation capacitor; and the compensation capacitor is connected with the gate leakage parasitic capacitor in parallel, and the total capacitance value of the compensation capacitor and the gate leakage parasitic capacitor after being connected in parallel is a fixed value throughout. According to the thin film transistor pixel structure and the thin film transistor display device, the modulation work of voltage of a common electrode layer on each product is not needed.

Description

technical field [0001] The invention relates to the technical field of electronic display, in particular to a thin film transistor pixel structure and a thin film transistor display device. Background technique [0002] With the development of display technology, e-books made of e-paper technology have become more and more popular in the market due to their features such as paper-like readability, extremely low power consumption, wide viewing angle, and flexibility. Among them, the electronic paper technology using electronic ink is the most mature. The current general-purpose electronic ink uses spherical transparent and smooth microcapsules to coat the dielectric suspension (or gas). Electronegative carbon black particles and electropositive titanium dioxide white charged light-scattering particles are floating in the suspension. These capsules are distributed in The polyurethane adhesive constitutes a dispersion system, and is coated or printed on a flexible conductive p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L27/12G02F1/167G02F1/1368G09G3/34
Inventor 吴天一马骏
Owner SHANGHAI TIANMA MICRO ELECTRONICS CO LTD