Ringing suppression circuit

A technology for suppressing circuits and series circuits, which can be applied to circuits, electrical components, and line transmission components that bypass ringing signals, and can solve problems such as disadvantages.

Active Publication Date: 2012-11-21
DENSO CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the energy of the distorted part of the waveform is not consumed in the case of a short circuit, the energy is reflected at the short circuit point and reaches the node side where the signal has been transmitted
This is not good for other nodes

Method used

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Examples

Experimental program
Comparison scheme
Effect test

no. 1 example )

[0045] Referring to the first embodiment shown figure 1 , the ringing suppression circuit 1 is connected in parallel to the transmission line 3, and the transmission line 3 includes a transmission circuit (or receiver circuit) 2, and a high-potential-side signal line 3P and a low-potential-side signal line 3N. The ringing suppression circuit 1 includes a P-channel metal oxide semiconductor field effect transistor (MOSFET) 4 and an N-channel MOSFET 5 (first and second interline switching element).

[0046] Furthermore, a series circuit of a capacitor 6 and a resistor 7 is connected on the transmission circuit 3 , and a common connection point of each of the capacitor 6 and the resistor 7 is connected to the gate of the FET 4 . The series circuit configures the delay circuit 8 . The source (potential reference side conductive terminal) of the N-channel MOSFET 9 (inverter circuit, control switching element) is connected to the signal line 3N, the drain is pulled up to high leve...

no. 2 example )

[0056] according to image 3 In the second embodiment shown, the ringing suppression circuit 12 is configured such that the on and off states of the FET 4 and the FET 5 become opposite to those of the first embodiment.

[0057] That is, the source of the P-channel MOSFET 13 (inversion circuit, control switching circuit) instead of the FET 9 is connected to the signal line 3P and the gate is connected to the signal line 3N while being lowered to the ground potential via the resistor 10, And the drain is connected to the gate of FET 4 . Further, the gate of the FET 5 is connected to the signal line 3N via the capacitor 6 while also being connected to the signal line 3P via the resistor 7 . In addition, a series circuit composed of a resistor 7 and a capacitor 6 configures a delay circuit 8a. Furthermore, the delay circuit 8 a and the FET 13 configure a control circuit (control section) 14 .

[0058] In the second embodiment, when the differential signal is high, FET 13 is on ...

no. 3 example )

[0062] according to Figure 4 In the third embodiment shown, the ringing suppression circuit 15 configures the delay circuit 17 by connecting the diode 16 in parallel to the resistor 7 in the ringing suppression circuit 1 of the first embodiment. Further, the gate of the FET 9 is also connected to the signal line 3P via the resistor 18 while being connected to the signal line 3N via the capacitor 19 . Diode 16 is connected in parallel to resistor 18 .

[0063] Here, FET 9 , resistors 10 and 18 , capacitor 19 , and diode 20 configure an inverter circuit 21 . Here, the diode 16 is connected so that the anode is on the signal line 3P side and the diode 20 is connected so that the anode is on the signal line 3N side. Furthermore, the delay circuit 17 and the inverter circuit 21 configure a control circuit (control section) 22 .

[0064] In the first embodiment, if an overshoot occurs after the signal waveform falls when the differential signal level changes from high to low, th...

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Abstract

An inter-line switching element formed of a MOSFET(4,5,7) is provided between a pair of signal lines(3P,3N). When the level of a differential signal changes from high to low, a control circuit turns on the FET for a fixed period thereby to suppress ringing by decreasing the impedance between the signal lines(3P,3N) when the level of the differential signal transitions, and causing the energy of the distortion of the differential signal waveform to be absorbed by the on-resistance of the FET(4,5,7).

Description

technical field [0001] The present disclosure relates to a ringing suppression circuit that is connected to a transmission line that transmits a differential signal through a pair of high-potential-side signal line and low-potential-side signal line and that suppresses noise generated along with transmission of the signal. ringing. Background technique [0002] In the case of transmitting a digital signal via a transmission line, since part of the signal energy is reflected when the signal level changes, distortion in the waveform such as overshoot and undershoot, that is, ringing, occurs on the receiving side. Various proposals are made, for example, in the following patent documents to suppress waveform distortion. [0003] [Patent Document 1] JP 2001-127805A (US 6,326,803B1) [0004] [Patent Document 2] JP 2010-103944A [0005] For example, in Patent Document 1, in a case where the voltage level of a signal transitions between high and low in a terminal circuit of a tr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04L25/02H04L25/12
CPCH04B3/42H04L25/026
Inventor 森宽之小畑洋幸北川昌宏岸上友久小池智礼前田登铃木洋一朗
Owner DENSO CORP
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