Unlock instant, AI-driven research and patent intelligence for your innovation.

A method for preparing silicon-based three-dimensional nanostructures by step-by-step heating

A three-dimensional nano, step-by-step heating technology, applied in the direction of nanotechnology, structural parts, electrical components, etc., can solve the problems of easy deformation of silicon materials, capacitance drop, etc.

Inactive Publication Date: 2014-10-15
SHANGHAI JIAOTONG UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the field of lithium batteries, because silicon is known as the anode material with the highest capacitance, it has been widely studied. However, during the charging and discharging process of silicon materials, because of the repeated insertion and extraction of lithium ions, silicon materials are easily deformed and finally lead to capacitance. Decline

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for preparing silicon-based three-dimensional nanostructures by step-by-step heating
  • A method for preparing silicon-based three-dimensional nanostructures by step-by-step heating

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Place the cleaned silicon wafer in the magnetron sputtering chamber, and sputter catalyst iron particles on the silicon wafer. The parameters used are: sputtering power 150w, buffer gas of argon, flow rate of 20sccm, pressure in the chamber during sputtering The sputtering time is 0.1-1 Pascal, and the sputtering time is 20 seconds. Under the field emission scanning electron microscope, the obtained silicon wafer shows that iron particles are randomly arranged, and the particle size is 5-50 nanometers. Place the sputtered silicon wafer in a larger graphite crucible, weigh 5g of silicon monoxide powder and place it in a smaller graphite crucible, and nest the two crucibles within the range of action of the induction coil. Vacuumize the system, fill it with argon, repeat several times to ensure that there is basically no residual oxygen in the system, adjust the argon flow to 50 sccm, and adjust the valve of the gas extraction port, so that the argon can pass from the smal...

Embodiment 2

[0018] The silicon source is changed to a high-purity silicon wafer, and the rest are the same as in Embodiment 1. After the reaction is completed, the desired silicon-based three-dimensional nanostructure can also be obtained.

Embodiment 3

[0020] A method for preparing a silicon-based three-dimensional nanostructure by heating in steps, comprising the following steps:

[0021] (1) Put the cleaned silicon wafer in the sputtering chamber, use magnetron sputtering to plate a certain amount of iron on the silicon wafer as a catalyst, and the obtained silicon wafer can be seen under the field emission scanning electron microscope to randomly arrange iron particles, The particle size is 5-50 nanometers;

[0022] (2) Place an appropriate amount of silicon source in a smaller graphite crucible, and place the iron-plated silicon chip in a larger graphite crucible; the two crucibles are nested with each other so that the steam evaporated at the silicon source can pass through the silicon smoothly. sheet surface;

[0023] (3) Place the two crucibles within the range of action of the induction coil and evacuate them;

[0024] (4) Turn on the heating power supply and adjust the output power so that the temperature in the f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to View More

Abstract

The invention relates to a method used for preparing a silicon substrate three-dimensional nanometer structure through substep heating. The method comprises the steps of using two hollow graphite crucibles with different inner diameters, enabling two crucibles to be mutually nested, wherein a silicon source is placed on one graphite crucible, and a silicon slice of a plating iron placed on the other graphite crucible is utilized as a substrate; placing the two crucibles on the appropriate positions, rapidly raising temperature to 950 DEG C, keeping temperature for 5 minutes, reducing the power of an induction furnace, cooling to be about 850 DEG C in a plurality of seconds, and sequentially keeping for 5 minutes so as to close a power supply; and obtaining the three-dimensional nanometer structure on a silicon slice substrate, wherein specifically, the thicker silicon nanowires form a skeleton with a three-dimensional structure, and the thinner silicon nanowires are filled in the gap of the skeleton. The obtained material has larger specific surface area and a firm three-dimensional skeleton, and therefore, the material has better application in a lithium battery and a high performance sensor.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, and in particular relates to a method for preparing a silicon-based three-dimensional nanostructure by stepwise heating. Background technique [0002] As the most important and widely used semiconductor material, silicon has always been a research hotspot. Compared with bulk silicon materials, nano-silicon materials (silicon nanowires, silicon nanotubes, silicon nanoparticles) have superior physical, chemical, electrical and optical properties. In the field of lithium batteries, because silicon is known as the anode material with the highest capacitance, it has been widely studied. However, during the charging and discharging process of silicon materials, because of the repeated insertion and extraction of lithium ions, silicon materials are easily deformed and finally lead to capacitance. Decline. In recent years, several research groups have investigated the effect of various...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01M4/38B82Y40/00
CPCY02E60/10
Inventor 张亚非钱炳建李海蓉苏言杰魏浩
Owner SHANGHAI JIAOTONG UNIV