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Purification method of silicon tetrachloride

A silicon tetrachloride and purification method technology, applied in the direction of silicon halide compounds, halosilanes, etc., can solve the problems of long process, high energy consumption, and large investment, and achieve the goals of shortening the process, saving investment, and saving floor space Effect

Active Publication Date: 2014-04-02
CHINA TIANCHEN ENG +1
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Problems solved by technology

The purification of silicon tetrachloride by using a partition column overcomes the problems of long process, large investment and high energy consumption in the conventional process of purifying silicon tetrachloride

Method used

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  • Purification method of silicon tetrachloride
  • Purification method of silicon tetrachloride

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Experimental program
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Embodiment Construction

[0048] figure 1 Shown is a traditional two-tower purification process flow chart for silicon tetrachloride.

[0049] The process consists of silicon tetrachloride light separation tower 1 and its supporting light separation tower condenser 3 and light separation tower reboiler 2, silicon tetrachloride heavy separation tower 5 and its supporting heavy separation tower condenser 7 and heavy separation tower The sub-column reboiler 6 and the sub-column feed pump 4 are composed.

[0050] The crude silicon tetrachloride 101 enters the light fractionation tower 1, after separation of the light component impurity 102 is taken out from the top of the tower, after being condensed, it is partly refluxed and partly taken out according to a certain reflux ratio. The silicon tetrachloride 103 containing heavy component impurities is taken out from the bottom of the column and sent to the heavy fraction column 5 through the heavy fraction column feed pump 4 .

[0051] In the heavy fractio...

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Abstract

The invention provides a purification method of silicon tetrachloride by a diaphragm column. The purification method mainly includes the following steps: coarse silicon tetrachloride enters a charging side of a diaphragm section of a diaphragm rectifying column; and pure silicon tetrachloride is obtained on the other side of the diaphragm section after the coarse silicon tetrachloride is separated, a light composition and silicon tetrachloride mixture is obtained at the top of the rectifying column, and a heavy composition and silicon tetrachloride mixture is obtained at the bottom of the rectifying column. By the purification method for silicon tetrachloride, thermal coupling in the rectifying column is achieved, energy waste is avoided, energy consumption in the rectification process is reduced, and accordingly production cost of polycrystalline silicon is reduced. Compared with the traditional purification method for silicon tetrachloride, the purification method for silicon tetrachloride has the advantages that process is shortened, amount of devices is reduced, and space is saved. Compared with the traditional two-column method, the purification method of silicon tetrachloride has the advantages that investment can be economized by more than 30% and energy consumption is reduced by 30%-50% by using the diaphragm column.

Description

technical field [0001] The invention belongs to the field of polysilicon production, and in particular relates to an energy-saving method for purifying silicon tetrachloride in the polysilicon production process. Background technique [0002] In my country's current polysilicon industry, the improved Siemens process is widely used. This process uses trichlorosilane as a raw material and reduces trichlorosilane with hydrogen at high temperature to produce polysilicon. At present, there are mainly two kinds of production processes of trichlorosilane widely used, thermal hydrogenation process and cold hydrogenation process. The thermal hydrogenation process produces trichlorosilane through the reaction of silicon powder and hydrogen chloride. The cold hydrogenation process is the reaction of silicon tetrachloride with silicon powder and hydrogen to produce trichlorosilane. Compared with hot hydrogenation, cold hydrogenation has the advantages of low power consumption, high co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B33/107
Inventor 裴艳红李强马国栋耿玉侠
Owner CHINA TIANCHEN ENG