Sputtering machine and control method for magnet thereof

Abstract

A sputtering machine and a control method for a magnet thereof. The sputtering machine comprises a cavity chamber, a target material loading plate, a cover, a magnet, a drive mechanism and a programming controller. The cavity chamber has an opening. The target material loading plate is positioned in the cavity chamber. The cover covers the opening of the cavity chamber, and has a covering opening which is smaller than the cavity chamber opening and exposes the target material loading plate. The magnet is arranged in the cavity chamber. The drive mechanism is in connection with the magnet to drive the magnet to move on the target material loading plate. The programming controller is connected to the drive mechanism to drive the magnet to move along a first path with two first end points and a second path with two second end points, wherein both the first path and the second path span the covering opening, and the two second end points are between the two first end points. The space of magnet took up of the two first end points is not overlapped with that of the two second end points.

Description

technical field [0001] The invention relates to a metal thin film deposition device, in particular to a sputtering machine and a control method for a magnet thereof. Background technique [0002] In the process of liquid crystal display panels, plasma display panels, or semiconductor microcircuits, in order to make metal lines or metal contacts of various shapes, manufacturers need to form metal thin films on the substrates. Generally, methods for forming a metal thin film on a substrate can be classified into physical vapor deposition (Physical Vapor Deposition, referred to as PVD) method and chemical vapor deposition (Chemical Vapor Deposition, referred to as CVD) method. Among them, the PVD method can be mainly divided into a sputtering method, a resistance heating evaporation method, and an electron gun heating evaporation method. The so-called sputtering method refers to passing an inert gas (such as Argon, Argon for short) into a chamber of a sputtering machine in a v...

AI Technical Summary

Problems solved by technology

[0005] The invention provides a control method of a sputtering machine and its magnet, wherein the magnet of the sputtering machine has two moving paths located on the same straight line, so as to solve the problem of too much noise on the edge of the target in the sputtering process of the prior art. Detachment, which in turn causes the problem of increased production costs

The target carrier is located in the chamber

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