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Piezoelectric thin-film element, process for producing same, and piezoelectric thin-film device

A piezoelectric film and device technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, piezoelectric devices/electrostrictive devices, material selection for piezoelectric devices or electrostrictive devices, etc., can Solve the problems of characteristic deviation deterioration, the influence of size cannot be ignored, etc., and achieve the effect of excellent piezoelectric characteristics

Active Publication Date: 2012-12-12
SUMITOMO CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the piezoelectric material produced by the production method centered on the sintering method of the conventional production method, especially when the thickness is 10 μm or less, is close to the size of the crystal grains constituting the material, and the influence of the size cannot be ignored.
Therefore, there is a problem that the deviation or deterioration of the characteristics becomes remarkable

Method used

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  • Piezoelectric thin-film element, process for producing same, and piezoelectric thin-film device
  • Piezoelectric thin-film element, process for producing same, and piezoelectric thin-film device
  • Piezoelectric thin-film element, process for producing same, and piezoelectric thin-film device

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Effect test

Embodiment 1

[0115] Embodiments of the present invention are described below.

Embodiment 1）

[0117] use Figure 1~Figure 8 illustrate.

[0118] figure 1 A cross-sectional view showing an overview of a substrate with a piezoelectric thin film. In this embodiment, an adhesive layer 2 is formed on a Si substrate 1 having an oxide film, and a lower electrode layer 3 and a piezoelectric thin film layer 4 of KNN with a perovskite structure are sequentially formed on the upper portion of the adhesive layer 2. Piezoelectric thin film devices.

[0119] At this time, the crystal system of the piezoelectric film layer 4 is quasi-cubic or tetragonal or orthorhombic, and at least a part of the piezoelectric film layer 4 can be ABO 3 crystalline or amorphous or a mixture of the two. Here, A is one or more elements selected from Li, Na, K, La, Sr, Nd, Ba, and Bi, and B is an element selected from Zr, Ti, Mn, Mg, Nb, Sn, Sb, Ta, and One or more elements in In, O is oxygen. Pb-containing piezoelectric material may be used as the A-site piezoelectric material, but a Pb-free piez...

Embodiment 2）

[0144] use Figure 9~Figure 10 illustrate.

[0145] Next, when accurately calculating the diffraction intensity ratio of the (001) orientation component and the (111) orientation component, it is necessary to discuss the correction values ​​of the respective X-ray diffraction intensities. For this purpose, the pole figures of (001) and (111) are investigated.

[0146] Figure 9 Displays the simulation results for the pole figure. Figure 9 (a) is a simulation result of a pole figure with (001) as a pole. As shown in this figure, it can be seen that the (110) diffraction of the (001) oriented KNN contributes 4 equivalent diffractions. At this time, the correction factor is considered to be 4. On the other hand, by Figure 9 (b) The simulation results using (111) as the pole figure, it can be seen that the (110) diffraction of the (111)-oriented KNN contributes 3 equivalent diffractions, so the correction factor is 3. Therefore, when the volume fraction of (001) orientati...

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Abstract

Disclosed is a piezoelectric thin-film element which comprises a substrate and, disposed thereon, at least a lower electrode, a piezoelectric thin film represented by the general formula (NaxKyLiz)NbO3 (0=x=1, 0=y=1, 0=z=0.2, and x+y+z=1), and an upper electrode, characterized in that the piezoelectric thin film has a crystal structure constituted of a quasi-cubic, tetragonal, or orthorhombic system or has a state in which at least one of those crystal systems is coexistent, that the crystal grains have been oriented preferentially along up to two specific crystallographic axes among those axes, and that with respect to the ratio between (001) components and (111) components, as the oriented crystallographic components, the proportion by volume of the (001) components is 60-100% and the proportion by volume of the (111) components is 0-40%, when the sum of both is taken as 100%.

Description

technical field [0001] The present invention relates to a piezoelectric thin film device and a piezoelectric thin film device using lithium potassium sodium niobate film or the like. Background technique [0002] Piezoelectric bodies are processed into various piezoelectric devices for various purposes, and are especially widely used as functional electronic components such as actuators that generate strain by applying a voltage, sensors that generate voltage from the strain of the device, and the like. As piezoelectrics used in actuators and sensors, lead-based dielectrics with excellent piezoelectric characteristics have been widely used so far, especially Pb(Zr 1-x Ti x )O 3 Perovskite-type ferroelectrics, piezoelectrics are usually formed by sintering oxides containing various elements. In addition, due to concerns about the environment in recent years, it is hoped to develop lead-free piezoelectric bodies, and lithium potassium sodium niobate (general formula: (Na x...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L41/18C23C14/34H01L41/08H01L41/22H03H9/17
CPCH03H9/02574C30B23/02C23C14/088C30B29/30H03H9/171H03H9/02094H03H9/02015H01L41/1873H10N30/8542H10N30/076H10N30/704
Inventor 末永和史柴田宪治佐藤秀树野本明
Owner SUMITOMO CHEM CO LTD
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