Preparation method of silicon-based thin film solar battery
A solar cell, silicon-based thin film technology, applied in circuits, electrical components, manufacturing tools, etc., can solve problems such as the inability to meet ablation quality, and achieve the effects of fast scribing, reduced production costs, and high quality
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[0021] The embodiments of the present invention provide a method for preparing silicon-based thin-film solar cells with high scribing quality, meeting industrial processing speed requirements, simple procedures, and low production costs. The process flow chart of the method is as figure 1 shown, see also figure 2 . The method comprises the steps of:
[0022] S1: Provide a light-transmitting substrate 1 coated with a light-transmitting conductive oxide layer (TCO layer) 2 on the surface;
[0023] S2: apply a picosecond laser beam, make the picosecond laser beam pass through the substrate 1 to reach the conductive oxide layer 2, and scratch the conductive oxide layer 2 to form a first groove 51 penetrating the conductive oxide layer 2;
[0024] S3: Plating a semiconductor photoelectric conversion layer 3 on the surface of the conductive oxide layer 2 with the first groove 51 that is opposite to the substrate 1;
[0025] S4: Apply a picosecond laser beam, make the picosecond...
Embodiment 1
[0050] The structure of the silicon-based thin-film solar cell of this embodiment is as follows figure 2 As shown, the silicon-based thin film solar cell preparation method is:
[0051] S11: providing a light-transmitting substrate 1 coated with a light-transmitting conductive oxide layer (TCO layer) 2 on the surface;
[0052] S12: Fix the substrate 1 provided in step S11 on the horizontal workbench, and fix the picosecond laser above the horizontal workbench at the same time; wherein, the light-transmitting conductive oxide layer 2 is facing downward, and the substrate 1 is fixed facing upward; The position of the workbench in the vertical direction and the horizontal direction should be kept substantially constant; the vertical distance between the picosecond laser and the substrate 1 is fixed, and the picosecond laser can reciprocate horizontally or vertically parallel to the substrate 1; then Turn on the picosecond laser, so that the picosecond laser beam emitted by the ...
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