A broadband radio frequency switch cmos circuit

Abstract

The invention discloses a wideband radio-frequency switch CMOS (Complementary Metal Oxide Semiconductors) circuit, relating to a radio-frequency electric switch. The wideband radio-frequency switch CMOS circuit which is capable of effectively reducing the insertion loss of the switch, can work in a frequency range of DC-43GHz when the switch is isolated and a pi filter circuit changes into an impendence transformation circuit, can be integrated on an Soc (System on Chip) or ASIC (application-specific integrated circuit) and the like and is used for carrying out transmission and isolation operation on radio frequency signals. The wideband radio-frequency switch CMOS circuit is provided with a digital control module, a transmission gate module and a pi network module; the input end of the digital control module is externally connected with a digital control signal; and the input end of the transmission gate module is connected with a radio frequency signal, the control end of the transmission gate module is connected with the output end of a digital control signal module, the output end of the transmission gate module is connected with the input end of the pi network module, the control end of the pi network module is connected with the output end of the digital control signal module, and the output end of the pi network module outputs a final signal.

Description

technical field [0001] The invention relates to a radio frequency electric switch, in particular to a broadband radio frequency switch CMOS circuit. Background technique [0002] RF switches are important control components in the fields of radar, electronic countermeasures, communication, and measurement. Due to the characteristics of GAAS, RF switches are widely manufactured using GAAS technology. Its main advantage is that it has extremely low bias power dissipation and high switching speed. Since the DC terminal and RF terminal are easily isolated by resistance, no Significant DC and RF power dissipation, thus easy to achieve wide frequency band operation. However, because the GAAS process is not compatible with the standard CMOS process of integrated circuits, it is difficult to be integrated into the chip, and the use of different processes to make a system will undoubtedly increase the cost of the system and hinder the high integration of the chip. Utilizing the sta...

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Problems solved by technology

[0004] 1) The parasitic capacitance of the MOS tube at high frequency is large and cannot be ignored, which leads to an increase in the insertion loss of the switch and greatly reduces the isolation of the switch

[0005] 2) Due to the presence of parasitic reverse-biased diodes on the MOS tube substrate, this limits the amplitude of the radio frequency signal

[0009] However, the CMOS switch circuit mentioned in the literature [1] only uses a single-tube bypass isolation, resulting in a decrease in the isolation attenuation of the switch at high frequencies; the circuit mentioned in the literature [2], due to the multi-stage attenuation method, The isolation of the switch can be guaranteed, but the multi-level MOS tube introduces large parasitic parameters, and the insertion loss will increase at high frequencies, and it uses a transmission line scheme, which may cause mutual inductance of different transmission lines during integration impact, the area cannot be made very small; BiCMOS technology is used in literature [3], although the performance has been improved, but a large number of inductive devices are cited, and the area cannot be made small, and the integration level is not high

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