Micro acceleration transducer based on silicon substrate giant magnetoresistance effect

Abstract

The invention discloses a micro acceleration transducer based on a silicon substrate giant magnetoresistance effect, which mainly comprises a bonding substrate, an iron magnetic membrane and an acceleration sensitive body, wherein the iron magnetic membrane is arranged in a rectangular groove (that is, a bottom groove) in the bonding substrate; the acceleration sensitive body is arranged above the bonding substrate and is connected with the bonding substrate; and the acceleration sensitive body comprises a sensitive mass correspondingly arranged above the bottom groove, a giant magnetic-sensing resistor arranged on the upper surface of the sensitive mass and corresponding to the iron magnetic membrane in position, a cantilever arranged around the sensitive mass, and a support frame body arranged on the outer side of the cantilever. The giant magnetic-sensing resistor layer vibrates in the direction perpendicular to the upper surface of the iron magnetic membrane and along with the sensitive mass. The micro acceleration transducer adopts an integral structure design, is reasonable in structure, simple in detection circuit, convenient to use, good in reliability, and suitable for miniaturization.

Description

technical field [0001] The invention relates to the related field of micro-inertial navigation technology, in particular to a micro-mechanical acceleration sensor based on the giant magnetoresistance effect. Background technique [0002] At present, the commonly used detection methods of micro-mechanical acceleration sensors are piezoresistive, capacitive, piezoelectric and tunnel effect, etc. The piezoresistive is based on the principle of piezoresistive effect of highly doped silicon. Pressure-sensitive devices have a strong dependence on temperature, and the bridge detection circuit composed of pressure-sensitive devices will also cause sensitivity drift due to temperature changes; the improvement of capacitive precision is to increase the capacitance area, due to the miniaturization of devices , its accuracy is difficult to improve due to the reduction of the effective capacitance area. The sensitivity of the piezoelectric effect nano sensor is easy to drift, requires f...

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Problems solved by technology

[0002] At present, the commonly used detection methods of micro-mechanical acceleration sensors are piezoresistive, capacitive, piezoelectric and tunnel effect, etc. The piezoresistive is based on the principle of piezoresistive effect of highly doped silicon. Pressure-sensitive devices have a strong dependence on temperature, and the bridge detection circuit composed of pressure-sensitive devices will also cause sensitivity drift due to temperature changes; the improvement of capacitive precision is to increase the capacitance area, due to the miniaturization of devices , its accuracy is difficult to improve due to the reduction of the effective capacitance area

The sensitivity of the piezoelectric effect nano sensor is easy to dri

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