Integrated electric field sensor based on common path interference

An electric field sensor and integrated electric field technology, applied in the direction of electrostatic field measurement, etc., can solve the problems of limited application and low sensor sensitivity, achieve good temperature stability, improve sensitivity and dynamic range

Active Publication Date: 2014-07-16
TSINGHUA UNIV
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  • Application Information

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Problems solved by technology

The amplitude in the field of strong electric field measurement is usually 1kV / m to 1000kV / m. The sensitivity of this type of sensor is too low, which limits its application in strong electric field measurement

Method used

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  • Integrated electric field sensor based on common path interference
  • Integrated electric field sensor based on common path interference
  • Integrated electric field sensor based on common path interference

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Embodiment Construction

[0037] The integrated electric field sensor based on common path interference proposed by the present invention has two different structures:

[0038] The first structure, such as Figure 4 with Figure 5 As shown, it includes a lithium niobate substrate 1, a silicon substrate 8, a spacer 11, a detection unit, and a modulation unit. The lithium niobate substrate 1 and the silicon substrate 8 are bonded to each other through an ultraviolet curing glue 9. The lithium acid substrate 1 and the silicon substrate 8 are respectively bonded to each other with the gasket 11 through the ultraviolet curing glue 9;

[0039] The detection unit includes two upper contact electrodes 5, connecting wires 6 and two dipole antennas 7. The two dipole antennas 7 are respectively attached to the surface of the silicon substrate 8 by photolithography. The two dipole antennas are triangular, the axial length La of the dipole antenna is 2mm-20mm, the bottom width Wa of the dipole antenna 7 is 100μm-400μm, ...

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Abstract

The invention relates to an integrated electric field sensor based on common path interference, and belongs to the technical field of electric field measurement. The sensor comprises a lithium niobate substrate, a silicon substrate, a gasket, a probing unit and a modulation unit, wherein the lithium niobate substrate and the silicon substrate are adhered and connected with each other through ultraviolet curing glue and are respectively adhered an connected with the gasket through the ultraviolet curing glue, the probing unit comprises two upper contact electrodes, a connecting wire and two dipole antennae, and the modulation unit comprises two lower contact electrodes, an optical wavegudie and two modulation electrodes. With the adoption of the electric field sensor, the temperature stability is good; on the basis of ensuring that the size of the sensor is small, the sensitivity and a dynamic range of the electric field measurement are obviously improved; and according to the two-dimension electric field sensor designed by the invention, the axial directions of two pairs of antennas in the probing unit are orthogonal and combined with the modulation unit, thus realizing the two-dimension electric field measurement.

Description

Technical field [0001] The invention relates to an integrated electric field sensor based on common path interference, in particular to an optical integrated electric field sensor based on a common path interferometer structure based on electro-optical effect, and belongs to the technical field of electric field measurement. Background technique [0002] Electric field is a basic physical quantity that characterizes electromagnetic phenomena in nature, and electric field measurement is a basic research method in many scientific and technological fields. With the development of the power system and nuclear industry, the measurement of strong electric fields in the fields of high-voltage engineering, high-energy electromagnetic pulse and high-energy physics is attracting more and more attention from researchers. [0003] With the development of integrated optical technology, optical integrated electric field sensors have been studied in depth. The patent number is a US patent of USP...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R29/12
Inventor 王博牛犇曾嵘余占清庄池杰俞俊杰李婵虓
Owner TSINGHUA UNIV
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