Vacuum processing device, method for moving substrate and alignment mask, alignment method, and film forming method

A vacuum processing device and mask technology, which is applied to lighting devices, gaseous chemical plating, coatings, etc., can solve the problems of longer downtime, manual operation, and difficulty in particle management, so as to improve downtime and reduce particle size. Ease of management and reduction of work time

Active Publication Date: 2013-01-02
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is a problem that particle management in the vacuum tank is difficult to manage
In addition, the downtime of the equipment is longer and manual operation is required
[0007] Furthermore, since the alignment mask must be changed ac

Method used

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  • Vacuum processing device, method for moving substrate and alignment mask, alignment method, and film forming method
  • Vacuum processing device, method for moving substrate and alignment mask, alignment method, and film forming method
  • Vacuum processing device, method for moving substrate and alignment mask, alignment method, and film forming method

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Embodiment Construction

[0054] Reference numeral 1 denotes a vacuum processing apparatus of an example of the present invention.

[0055] First, the structure of the vacuum processing apparatus 1 will be described.

[0056] Referring to FIG. 1 , the vacuum processing apparatus 1 has a vacuum chamber 11, a gas introduction device 12 composed of shower nozzles is disposed on the ceiling side of the vacuum chamber 11, and a processing table 13 is disposed directly below it.

[0057] The vacuum tank 11 is connected to a vacuum exhaust system 31 , and the gas introduction device 12 is connected to a raw material gas introduction system 32 . While operating the vacuum evacuation system 31 to evacuate the inside of the vacuum chamber 11, raw material gases and reaction gases, which are material gases for thin film formation, are supplied from the raw material gas introduction system 32 to the gas introduction device 12. The device 12 distributes source gas and reaction gas into the vacuum chamber 11 .

[...

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Abstract

Provided is a vacuum processing device capable of replacing an alignment mask without exposing the inside of a vacuum chamber to air. A plate (23), into which a substrate lifting and lowering pin (46) and a mask lifting and lowering pin (45) that is longer in a vertical direction than the substrate lifting and lowering pin (46) are inserted, is disposed below a gas introduction device (12). A pin supporting member (24) is disposed below the plate (23). The pin supporting member (24) is structured so that when the distance from the plate (23) is made to be close to a first distance or less, the substrate lifting and lowering pin (46) and the mask lifting and lowering pin (45) can be each vertically mounted on the pin supporting member (24). The substrate lifting and lowering pin (46) and the mask lifting and lowering pin (45) are each provided with a locking member (47). The locking member (47) is used for suspending the substrate lifting and lowering pin (46) and the mask lifting and lowering pin (45) by the plate (23), above the pin supporting member (24), apart from the pin supporting member (24), when the distance between the plate (23) and the pin supporting member (24) is set to a second distance or more having a wider separation than the first distance.

Description

technical field [0001] The invention relates to a vacuum processing device, a moving method of a substrate and an alignment mask, an alignment method, and a film forming method. Background technique [0002] Organic EL elements have high luminous efficiency and can be assembled into thin light-emitting devices, so they have attracted attention in recent years for use in large-area display devices and lighting equipment. [0003] In the manufacturing process of an organic EL element, a lower electrode, an organic light-emitting layer, and an upper electrode are formed on a substrate, and then a protective film of silicon nitride or silicon oxide is formed on the substrate. [0004] Since the organic light-emitting layer is easily damaged by heat, a plasma CVD (PE-CVD) method capable of forming a film at a lower temperature than the thermal CVD method is used as a method of forming the protective film. [0005] For example, it is necessary to form a protective film in a state...

Claims

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Application Information

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IPC IPC(8): C23C16/04H01L51/50H05B33/10C23C16/42
CPCH01L51/56C23C16/042C23C16/54C23C16/4586H01L51/5253H10K50/844H10K71/00
Inventor 加藤裕子菊池正志龟崎厚治冈山智彦下田圭介
Owner ULVAC INC
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