Light-emitting diode chip structure
A light-emitting diode and chip structure technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve problems such as improving and affecting the brightness of chips, and achieve the effects of reducing heat generation, prolonging service life, and simple and compact structure
Inactive Publication Date: 2013-01-09
JIANGSU XINGUANGLIAN TECH
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Problems solved by technology
[0002] Due to the smaller feature size of light-emitting diode (LED) chips, the chips are getting smaller and smaller. However, due to factors such as packaging, the size of the electrodes becomes smaller and encounter obstacles, which affects the improvement of chip brightness.
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[0012] The present invention will be further described below in conjunction with specific drawings.
[0013] Such as figure 1 As shown: the present invention includes a substrate 1, an N-type gallium nitride layer 2, a quantum well 3, a P-type gallium nitride layer 4, a P electrode 5, an N electrode 6, a first reflective layer 7, a second reflective layer 8, A transparent conductive layer 9 , a passivation layer 10 , a step 11 , a first contact hole 12 , and a second contact hole 13 .
[0014] Such as figure 1 As shown, the present invention includes a substrate 1 and a P electrode 5 and an N electrode 6 located above the substrate 1. An N-type gallium nitride layer 2 is deposited on the substrate 1, and the N-type gallium nitride layer 2 covers the substrate 1. Above, the substrate 1 adopts a sapphire substrate; a quantum well 3 is provided on the N-type gallium nitride layer 2, and a P-type gallium nitride layer 4 is provided on the quantum well 3; in order to avoid curren...
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Abstract
The invention relates to a light-emitting diode chip structure which comprises a substrate, a P electrode and an N electrode, wherein an N-type gallium nitride layer is deposited on the substrate, a quantum well is arranged on the N-type gallium nitride layer, and a P-type gallium nitride layer is arranged on the quantum well. The light-emitting diode chip structure is characterized in that a first reflection layer is arranged on the P-type gallium nitride layer, a stair is formed at the end of the N-type gallium nitride layer in etching mode, and a second reflection layer is arranged on the stair; transparent conducting layers are arranged on the first reflection layer and the P-type gallium nitride layer, and passivation layers are deposited on the transparent conducting layers and are wrapped on the P-type gallium nitride layer, the N-type gallium nitride layer and the quantum well under the transparent conducting layer; and a first contact hole and a second contact hole are arranged on the passivation layer, the bottom of the first contact hole is contacted with the first reflection layer, the bottom of the second contact hole is contacted with the second reflection layer, the P electrode is filled in the first contact hole, and the N electrode is filled in the second contact hole. The light-emitting diode chip structure improves light-emitting efficiency of a chip, prolongs service life of light-emitting diode (LED) chips and is safe and reliable.
Description
technical field [0001] The invention relates to a light-emitting diode chip structure, which belongs to the technical field of LED chips. Background technique [0002] Due to the smaller feature size of light-emitting diode (LED) chips, the chips are getting smaller and smaller, but due to factors such as packaging, the size of the electrodes is smaller and encounter obstacles, which affects the improvement of chip brightness. Contents of the invention [0003] The object of the present invention is to overcome the deficiencies in the prior art, provide a light-emitting diode chip structure, improve the luminous efficiency of the light-emitting diode chip, and improve light output. [0004] According to the technical solution provided by the present invention, the light-emitting diode chip structure includes a substrate, a P electrode and an N electrode located above the substrate, an N-type gallium nitride layer is deposited on the substrate, and the N-type gallium nitrid...
Claims
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Login to View More IPC IPC(8): H01L33/46H01L33/38
Inventor 杜高云张淋邓群雄许雪芳
Owner JIANGSU XINGUANGLIAN TECH