Stripping liquid composition for photoresist and preparation and applications of stripping liquid composition
A composition and stripping solution technology, applied in the direction of photosensitive material processing, etc., can solve the problems of lower yield rate, poor corrosion resistance of Cu wiring, affecting the properties of semiconductor devices, etc., and achieve the effect of preventing re-attachment and good corrosion resistance.
Active Publication Date: 2013-01-16
BOE TECH GRP CO LTD
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Problems solved by technology
[0002] In recent years, with the high density of integrated circuits, micro-etching technology has become the mainstream. When removing unnecessary photoresist layers after etching, it is required that no residues will be generated on the side walls and bottom of the pattern, because these residues and deposits such as Incomplete removal will affect the properties of semiconductor devices and reduce the yield, so it is necessary to remove these residues
[0003] A kind of photoresist stripping liquid composition commonly used at present, it is mainly made up of aliphatic alcohol polyoxyethylene ether, cyclohexanone and monoethanolamine, and formula is better to the anticorrosion performance of aluminum wiring, but to the anticorrosion performance of Cu wiring poor performance
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[0025] Hereinafter, although an Example demonstrates this invention in more detail, this invention is not limited to these Examples. In addition, unless otherwise specified, the compounding quantity is shown by mass parts.
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The invention relates to a stripping liquid composition for a photoresist and preparation and applications of the stripping liquid composition. The composition mainly comprises, by mass, 0.3-5 parts of components a, 2-15 parts of components b, 0.05-5 parts of components c and 2-15 parts of components d, wherein components a are fluorine-containing carboxylic acid or salt of the carboxylic acid, components b are at least one alkali compound of alkanolamine or quaternary amine hydroxide, components c are sulfur-containing anticorrosive agents, and components d are polar organic solvents. By the aid of the stripping liquid composition, the photoresist can be stripped in a good way, and the good anticorrosive effect is achieved for metal wiring.
Description
technical field [0001] The invention relates to a stripping liquid composition for photoresist and its preparation and application. Background technique [0002] In recent years, with the high density of integrated circuits, micro-etching technology has become the mainstream. When removing unnecessary photoresist layers after etching, it is required that no residues will be generated on the side walls and bottom of the pattern, because these residues and deposits such as Incomplete removal will affect the properties of semiconductor devices and reduce the yield, so it is necessary to remove these residues. [0003] A kind of photoresist stripping liquid composition commonly used at present, it is mainly made up of aliphatic alcohol polyoxyethylene ether, cyclohexanone and monoethanolamine, and the anticorrosion performance of formula to aluminum wiring is better, but to the anticorrosion of Cu wiring The performance is not good. Contents of the invention [0004] In orde...
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IPC IPC(8): G03F7/42
Inventor 刘陆吕志军栗首
Owner BOE TECH GRP CO LTD