Unlock instant, AI-driven research and patent intelligence for your innovation.

Measuring method for resistance of three-terminal resistors used for integrated circuits

A technology of integrated circuits and measurement methods, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve problems such as poor dimensional fit, complex simulation methods, etc., achieve less parameters, improve accuracy, and improve the measurement process. Simple and fast effects

Inactive Publication Date: 2014-12-10
SOUTHEAST UNIV
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Technical problem: the technical problem to be solved by the present invention is to provide a method for measuring the resistance value of a three-terminal resistance for an integrated circuit. The method is too complicated and the problem of poor fit to the size

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Measuring method for resistance of three-terminal resistors used for integrated circuits
  • Measuring method for resistance of three-terminal resistors used for integrated circuits
  • Measuring method for resistance of three-terminal resistors used for integrated circuits

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0068] Such as image 3 As shown, for a diode with a width of 6 μm and a length of 60 μm, when the test temperature is 25° C., the test curve and simulation curve fitting diagram of the “capacitance-voltage” characteristic obtained by the measurement method of the present invention. The abscissa represents voltage in volts; the ordinate represents capacitance in farads. In the figure, 【M】represents the test curve, and 【S】represents the simulation curve. image 3Among them, the root mean square error RMS achieved by fitting the test curve and the simulation curve is 0.731%.

Embodiment 2

[0070] Such as Figure 4 As shown, for a diode with a width of 6 μm and a length of 60 μm, when the test temperature is 25° C., the test curve and simulation curve fitting diagram of the “current-voltage” characteristic obtained by the measurement method of the present invention. The abscissa represents voltage in volts; the ordinate represents current in amperes. In the figure, 【M】represents the test curve, and 【S】represents the simulation curve. Figure 4 Among them, the root mean square error RMS achieved when fitting the test curve and the simulation curve is 1.332%.

Embodiment 3

[0072] Such as Figure 5 As shown, for a three-terminal resistor with a width of 5 μm and a length of 100 μm, at a test temperature of 25°C, V SS When being 0V, -2V and -4V respectively, the three-terminal resistance "resistance—V SD "Characteristics of the test curve and simulation curve fitting diagram. The abscissa represents the voltage V SD , the unit is volts; the ordinate represents the resistance, the unit is ohms. In the figure, 【M】represents the test curve, 【S】represents the simulation curve, RMS【V SS =0V] means V SS When it is 0V, the root mean square error of the test curve and the simulation curve fitting. RMS【V SS =-2V] means V SS When it is -2V, the root mean square error of the test curve and the simulation curve fitting. RMS【V SS =-4V] means V SS When it is -4V, the root mean square error of the test curve and the simulation curve fitting. Figure 5 in, V SS The root mean square error achieved by fitting the test curve and the simulation curve at 0V...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a measuring method for the resistance of three-terminal resistors used for integrated circuits, comprising the following steps that: (10) a macro-model of the three-terminal resistors used for integrated circuits is established; (20) a test structure of the three-terminal resistors used for integrated circuits is constructed; (30) a diode test data file and a three-terminal resistor test data file are established; (40) a model of the alternating current characteristic of the three-terminal resistors used for integrated circuits is established; (50) a model of the direct current characteristic of the three-terminal resistors used for integrated circuits is established; (60) a model file of the three-terminal resistors is established; and (70) the resistance characteristic of the three-terminal resistors in integrated circuits is measured. The measuring method is simple and effective and can solve the problems that the simulation method which is based on a three-terminal resistor physical model R3cmc of the existing integrated circuit engineering is excessively complex and the degree of fitting to size is poor.

Description

technical field [0001] The invention belongs to the field of simulation of microelectronic devices, and in particular relates to a method for measuring the resistance value of a three-terminal resistance used in an integrated circuit. Background technique [0002] Resistors are an important semiconductor device in integrated circuits and are widely used in the field of integrated circuits. Usually, the resistance simulation used in integrated circuit engineering uses the two-terminal resistance model. This model has few fitting parameters and the process of raising the model is simple, but it does not consider the influence of the substrate bias on the resistance value. Although the resistance simulation method using the two-terminal resistance model is simple but very inaccurate, the resistance simulation method using the two-terminal resistance model cannot guide the design and simulation of the integrated circuit well. [0003] In addition, as early as 2007, the Internat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 刘斯扬朱荣霞黄栋钱钦松孙伟锋陆生礼时龙兴
Owner SOUTHEAST UNIV