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A method for detecting the accuracy of the mask plate light-shielding plate of a photolithography machine

A technology of masks and shading plates, which is applied in the field of detecting the accuracy of masking plates and shading plates of lithography machines, and can solve the problems of adjusting measurement graphics, incompleteness, and the inability to accurately express the accuracy of masking plates and shading plates

Active Publication Date: 2014-10-22
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

It can directly determine the positioning accuracy of the mask shading plate, but due to the limitations of the naked eye, it cannot accurately express the accuracy of the mask shading plate, and because the exposure silicon wafer needs to be prepared in advance and the specific size is defined, so it cannot be customized according to the customer. According to the actual needs, flexibly adjust the size of the measurement graph to determine whether the accuracy of the size of the graph of different products can meet the requirements
[0007] So, in other words, this method is imperfect

Method used

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  • A method for detecting the accuracy of the mask plate light-shielding plate of a photolithography machine
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  • A method for detecting the accuracy of the mask plate light-shielding plate of a photolithography machine

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Embodiment Construction

[0021] The present invention proposes a method for detecting the accuracy of the mask mask of a lithography machine. The main principle is to use the test mask to expose the silicon wafer, and then measure the size of the exposure pattern on the actual silicon wafer to convert the actual silicon wafer The size of the upper exposure pattern is subtracted from the predetermined size, that is, the accuracy of the mask plate light shield can be determined, and then the precision performance (micron level) of the mask plate light shield of the photolithography machine can be accurately tested. When the positioning accuracy of the light-shielding plate of the mask is poorer, the size of the exposure pattern on the actual silicon wafer deviates more from the predetermined size.

[0022] see Figure 5 , Image 6 , Figure 7 , Figure 5 The actual pattern area 4 is formed on the shown test mask, and in this embodiment, there are four identical actual pattern areas 4 distributed in a...

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Abstract

The invention belongs to the semiconductor manufacturing technical field and in particular relates to a method for detecting the accuracy of the mask plate hood of a photoetching machine. The method comprises the following steps of: S1, preparing a test mask plate, wherein an actual pattern region is formed on the test mask plate and the actual pattern region comprises an actual pattern which comprises a main pattern; S2, performing exposure on a silicon wafer by means of the test mask plate, wherein the hood shields redundant light in the exposure process and only exposes the actual pattern region needing to be exposed; and S3, measuring the actual size of the exposed pattern on the silicon wafer, and calculating the offset between the actual size and the predetermined size, thereby determining the accuracy of the mask plate hood. The method is characterized in that once the test mask plate is fabricated, the test mask plate is suitable for testing various different types of photoetching machines, and no measurement pattern needs to be fabricated on the silicon chip in advance; therefore, the proposal is more flexible and convenient and capable of improving the detection accuracy of the hood.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, in particular to a method for detecting the precision of a mask plate light-shielding plate of a photolithography machine, and its function is to improve the detection ability of the precision of the mask plate light-shielding plate of a photolithography machine. Background technique [0002] With the continuous improvement of integrated circuit manufacturing technology and the continuous shrinking of line width in lithography technology, the area of ​​semiconductor devices is becoming smaller and smaller. The layout of semiconductors has evolved from ordinary single-function separation devices to integrated high-density multi-functional Integrated circuit; from the initial IC (integrated circuit) to LSI (large-scale integrated circuit), VLSI (very large-scale integrated circuit), until today's ULSI (ultra-large-scale integrated circuit), the area of ​​the device is further red...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/20G03F1/44
Inventor 朱骏张旭昇
Owner SHANGHAI HUALI MICROELECTRONICS CORP