Method of forming semiconductor device

Abstract

The invention relates to a method for forming a semiconductor device, which comprises the following steps: providing a substrate, wherein a dielectric layer is formed on the substrate; carrying out oxygen plasma treatment on the dielectric layer; treating the dielectric layer with carbonaceous gas; forming a mask layer on the dielectric layer; and etching the mask layer and the dielectric layer until the substrate is exposed, thereby forming a through hole. The invention ensures the surface flatness of the dielectric layer, and enhances the electric properties and reliability of the semiconductor device.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for forming a semiconductor device. Background technique [0002] With the continuous development of semiconductor logic technology, the quality requirements for the various film layers and interconnection structures forming semiconductor devices are also getting higher and higher. Defects in trenches / vias in film layers or interconnect structures in different processes will directly affect the reliability of semiconductor devices. [0003] Today, with the increasing integration of semiconductor devices, the size of logic devices is getting smaller and smaller, and the size of through holes in logic devices is also getting smaller. The method for forming via holes in existing logic devices is as follows: Figure 1 to Figure 3 shown in figure 1 In this method, a substrate 10 is provided, and the substrate 10 sequentially includes a semiconductor substrate, and s...

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Problems solved by technology

[0005] In the existing via holes for forming logic devices, undercuts are generated on the dielectric layer at the edge of the via holes, and short circuits will occur after depositing conductive substances in the via holes, which will affect the electrical performance of semiconductor devices.

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