Hot forging process of high performance tantalum target

Abstract

The present invention relates to a hot forging process for a high-performance tantalum target material, and the process thereof comprises the steps of: initially subjecting a tantalum ingot to a first forging by a cold forging method, subsequently washing with an acid, and heat-treating; then subjecting the same to a second forging by a hot forging method, again washing with an acid and heat-treating; and then subjecting the same to a third forging by a hot forging method. The present invention corresponds to subjecting a large-diameter (a diameter larger than or equal to 160 mm) tantalum ingot for a high-performance tantalum target material to forging by combining cold forging and hot forging processes, together with a suitable heat treatment process so as to obtain the grain size and textural composition required for the product. The rolled blank material produced by the present invention can be used to obtain a high-performance tantalum target material which has a predominant and uniform texture (110) in the thickness direction of the target material and satisfies the use requirements for high-end sputtering base stations; compared with a common tantalum target material, the high-performance tantalum target material not only achieves the textural composition on which the (110) texture is predominant in the thickness direction (110) of the target material, but also provides a higher requirement of uniformity of the texture, thus ensuring a consistent sputtering rate during use.

Description

technical field [0001] The invention relates to the technical field of nonferrous metal metallurgy, in particular to a hot forging process for a high-performance tantalum target. Background technique [0002] Tantalum targets are mainly used in the semiconductor coating industry. [0003] Physical vapor deposition (PVD) is one of the most critical processes in the production process of semiconductor chips. Its purpose is to deposit metal or metal compounds in the form of thin films on silicon wafers or other substrates, and then through photolithography and corrosion etc. The cooperation of the process finally forms the complex wiring structure in the semiconductor chip. Physical vapor deposition is accomplished through sputtering machines, and the sputtering target is a very important key consumable used in the above process. Common sputtering targets include high-purity Ta, as well as non-ferrous metals such as Ti, Al, Co and Cu. [0004] As the wafer size increases fro...

AI Technical Summary

Problems solved by technology

[0005] In the prior art, the tantalum target is mainly obtained by cold rolling or cold forging process, and the texture components in the thickness direction of the obtained target are not uniform, which is mainly manifested in the upper and lower layers of the target (100) texture is dominant, The (111) texture is dominant in the middle. This type of target can be used in machines with low requirements, but the uneven sputtering rate when used in high-end machines such as 12" is unacceptable.