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Device and method for supercritical drying of microwave excitation

A technology of supercritical drying and microwave generating device, which is applied in the processing of photosensitive materials, etc. It can solve the problems of nano-pattern fracture, lodging or adhesion, etc., and achieve the effects of short drying time, large power consumption and low energy consumption

Active Publication Date: 2014-03-19
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of this, the main purpose of the present invention is to provide a microwave-excited supercritical drying device and method to solve the problems of fracture, lodging or adhesion of nano-patterns in the drying process.

Method used

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  • Device and method for supercritical drying of microwave excitation
  • Device and method for supercritical drying of microwave excitation
  • Device and method for supercritical drying of microwave excitation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] Embodiment 1: Microwave drying width is 14.9nm HSQ adhesive lines

[0048] Step 1: Put a 2-inch, 4-inch or 8-inch silicon wafer with a photoresist pattern into a quartz device for development, and the quartz device has a developer suitable for HSQ glue;

[0049] Step 2: After the development is completed, replace the developer in the quartz device with deionized water;

[0050] Step 3: Put the replaced quartz device with the silicon wafer in figure 1 In the chamber of the microwave-excited supercritical drying device shown, the alternating electric field in the supercritical drying device is used for heating. The specific heating principle is: water molecules are polar molecules, which change rapidly with the direction of the alternating electric field , the polarity of the water molecules also changes direction. When the frequency of the change becomes faster and faster, the water molecules start to rotate at a high speed, the kinetic energy increases, the friction an...

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Abstract

The invention discloses a device and method for supercritical drying of microwave excitation. The device for the supercritical drying comprises a cavity (3), a quartz device (4) arranged in the cavity (3) and used for containing a silicon wafer (5) to be detected, a vacuum water pumping device (1) arranged outside the cavity (3) and communicated with the quartz device(4), a metal rotary plate (9) arranged on an inner lateral wall of the cavity (3), a motor (10) arranged in the cavity (3) and connected with the metal rotary plate (9), a microwave generating device (11) arranged in the cavity (3) and a yellow light source (12) arranged in the cavity (3). By means of the device and method, problems of breaking, falling or bonding and the like in a drying process of a nanometer image of a fine structure are solved.

Description

technical field [0001] The invention relates to the technical field of nanoscale photoresist pattern drying in the semiconductor industry, in particular to a microwave-excited supercritical drying device and method. Background technique [0002] In the fabrication process of microelectronic devices, with the further reduction of feature size and the further increase of structure complexity, the collapse of nano-device structures has become an increasingly serious problem. There are many reasons for the structure to collapse, such as being subjected to external forces, the stress of the structure itself, weaker structural materials, and surface tension during the drying process. Excluding other factors, the drying process becomes a very critical step. [0003] After cleaning the device with water as the main solvent, in the traditional drying method, the part with weak mechanical structure and the photoresist pattern with high aspect ratio will be damaged. Surface tension i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/40
Inventor 于明岩景玉鹏郭晓龙赵士瑞徐昕伟
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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