Check patentability & draft patents in minutes with Patsnap Eureka AI!

A Split Gate Trench Power MOS Device

A MOS device and split gate technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as early breakdown of devices, and achieve the effect of improving breakdown voltage and optimizing electric field distribution

Active Publication Date: 2015-12-02
HARBIN ENG UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The problem with this device is that the device is prone to premature breakdown, and the breakdown point occurs at the nearest position between the outermost cell and the terminal protection ring

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A Split Gate Trench Power MOS Device
  • A Split Gate Trench Power MOS Device
  • A Split Gate Trench Power MOS Device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] The present invention will be further described below in conjunction with accompanying drawing:

[0020] The present invention proposes layout edge design of split-gate trench power MOS devices. The trench structure in the device cell is specially designed to communicate with the terminal structure, and the mesa structure in the active region is a long strip structure with equal diameters and semicircles at both ends. While not adding process steps and photolithographic plates, the process steps are saved, the breakdown voltage of the device is ensured, and the working reliability of the device is improved.

[0021] In the research of split-gate trench power MOS devices, it is found that when the trench depth is constant, the breakdown voltage of split-gate trench power MOS devices is mainly affected by the distance between the trenches in the active region of the device. The traditional split-gate MOS device has a trench structure surrounded by mesas. At the corner of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of layout edge design of metal oxide semiconductor (MOS) devices and particularly relates to a split-gate type groove power MOS device communicated with a terminal structure and applied to groove structures in low and medium voltage devices. A groove structure in an active area is communicated with the terminal structure, the table face of the active area is of a long strip structure with two ends semicircular, and the diameter of the semicircle is identical with the width of the table face. The split-gate type groove power MOS device is of a structure that the groove encloses the table face structure, so that the table face of the active area of the device is ensured to be consistent, electric field distribution in the table face structure in the device is optimized, and breakdown voltage of the split-gate type groove power MOS device is improved integrally accordingly.

Description

technical field [0001] The invention relates to the field of layout edge design of MOS devices, in particular to a split gate type trench power MOS device used in low and medium voltage devices in which the trench structure communicates with the terminal structure. Background technique [0002] In the 1990s, the main research direction of the development and industrialization technology of power trench MOS field effect transistor (PowerTrenchMOSFET) was mainly to minimize the forward conduction resistance (Ron) of low-voltage power devices. Today, the structure of power trench MOS devices is suitable for most power MOSFET applications, and the characteristics of the devices are constantly approaching the one-dimensional limit of silicon materials (expressing the characteristic on-resistance in the drift region of the device and the breakdown in the off-state Theoretical relationship of voltage). The proposal of the reduced surface electric field REducedSURfaceField (RESURF)...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/78H01L29/06
Inventor 王颖胡海帆焦文利
Owner HARBIN ENG UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com