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A kind of low noise amplifier and its manufacturing method

A low-noise amplifier and manufacturing method technology, applied in the direction of improving amplifiers to reduce noise impact, etc., can solve the problems of increasing system power consumption, increasing system cost, etc., and achieve high quality factor, performance improvement, and noise figure reduction.

Active Publication Date: 2018-01-02
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, the method of increasing system complexity and adding off-chip components is usually used to reduce the noise figure, but there are defects of increasing system power consumption and system cost

Method used

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  • A kind of low noise amplifier and its manufacturing method
  • A kind of low noise amplifier and its manufacturing method
  • A kind of low noise amplifier and its manufacturing method

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Embodiment Construction

[0028] In order to make the content of the present invention clearer and easier to understand, the content of the present invention will be further described below in conjunction with the accompanying drawings of the specification. Of course, the present invention is not limited to this specific embodiment, and general replacements well known to those skilled in the art are also covered by the protection scope of the present invention. In addition, the present invention uses schematic diagrams to describe in detail. When describing the embodiments of the present invention in detail, the schematic diagrams are not partially enlarged according to a general scale and should not be used as a limitation to the present invention.

[0029] Please refer first figure 1 and figure 2 , Which is a structural diagram of a low noise amplifier according to an embodiment of the present invention. The inductor is formed on the substrate 200, and its area is the inductor area 100. Other devices o...

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Abstract

The invention discloses a low-noise amplifier and a manufacturing method for the same. The low-noise amplifier comprises an inductor and other devices, wherein the inductor and the other devices are formed in an inductor area and other device areas on a substrate; the inductor area is partitioned by the other device areas; a high-resistance substrate isolation area is formed below the inductor area; an annular n-trap grounding protection layer is arranged around the inductor area; and the n-trap grounding protection layer surrounds the other devices areas. According to the low-noise amplifier and the method disclosed by the invention, the problem of noise interference between a low-noise amplifier module and another module can be solved, and a noise coefficient can be further effectively reduced so as to improve the performance of the low-noise amplifier.

Description

Technical field [0001] The invention relates to the field of integrated circuits, in particular to a low noise amplifier and a manufacturing method thereof. Background technique [0002] An important feature of wireless sensor network chips is miniaturization and integration. With the continuous deepening of research on wireless sensor network chips, people have begun to not be satisfied with only implementing functions, but on the cost, integration, and functions of the chip. Put forward increasingly urgent requirements. The single-chip system integrated chip solution brought by the system chip can not only significantly increase the integration level, reduce the chip volume, and increase the packaging density, but also can effectively reduce the cost and cost of the chip system. Therefore, in the current chip design of wireless sensor networks, people have increasingly relied on system integration concepts to design related circuits and develop new generation chip products. [...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/26
Inventor 李琛
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT