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High electron mobility transistor with integrated low forward bias diode

A high electron mobility, transistor technology, applied in the direction of diodes, transistors, electric solid-state devices, etc., can solve the problems of area loss, increased cost, instability of Schottky diodes, etc.

Active Publication Date: 2013-03-06
INFINEON TECH AUSTRIA AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this approach results in area loss due to the incorporation of series lateral devices
Additionally, the pre-existing GaN baseline process had to be modified to include low forward bias Schottky diodes, which increased cost
Also, Schottky diodes may become unstable due to surface effects

Method used

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  • High electron mobility transistor with integrated low forward bias diode
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  • High electron mobility transistor with integrated low forward bias diode

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Embodiment Construction

[0018] figure 1 One embodiment of a high electron mobility transistor (HEMT) 100 with an integrated diode 102 with low forward bias, stable threshold voltage, and high current drive capability is shown. Diode 102 in figure 1 shown schematically. HEMT 100 is suitable for low voltage applications in the range of about 30V to 100V, for example. HEMT 100 includes a semiconductor substrate 104, such as a Si, SiC, or sapphire wafer, and may include an optional insulating layer 106, such as an AlN layer, formed on substrate 104 depending on the type of substrate material used. A lower III-V semiconductor buffer zone 108 , such as a GaN layer, is formed on the optional insulating layer 106 or directly on the substrate 104 . A compensation structure 110 is formed on the lower III-V semiconductor buffer 108, and an upper III-V semiconductor buffer 116, such as a layer of GaN, is formed on the compensation structure 110 such that the compensation structure 110 is interposed by the upp...

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Abstract

The invention discloses a high electron mobility transistor with an integrated low forward bias diode, which includes a source, gate and drain, a first III-V semiconductor region having a two-dimensional electron gas (2DEG) which provides a first conductive channel controllable by the gate between the source and drain, and a second III-V semiconductor region below the first III-V semiconductor region and having a second conductive channel connected to the source or drain and not controllable by the gate. The first and second III-V semiconductor regions are spaced apart from one another by a region of the high electron mobility transistor having a different band gap than the first and second III-V semiconductor regions.

Description

technical field [0001] The present invention relates to high electron mobility transistors, in particular to high electron mobility transistors with low forward bias integrated diodes. Background technique [0002] Conventional high electron mobility transistors (HEMTs) made in GaN / AlGaN technology are usually majority-carrier devices, that is, only one type of carrier (electrons or holes) is primarily involved in determining the electrical performance of the device. These features are particularly advantageous for III-V diodes compared to conventional silicon body diodes. In the case of silicon body diodes, the main electrical properties are controlled by doping and device dimensions, and both minority and majority carriers affect device operation. Specifically, in switching devices, conventional silicon devices experience what is known as "reverse recovery time," which represents the time delay required to remove the charge stored during the device's conduction period bef...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/10
CPCH01L29/66204H01L29/7786H01L29/66462H01L29/778H01L29/2003H01L29/861H01L27/06H01L29/41766H01L29/205H01L27/0629H01L29/66431H01L29/7785H01L29/7788
Inventor 吉贝托·库拉托拉奥利弗·黑贝伦
Owner INFINEON TECH AUSTRIA AG