Cleaning agent composition for photoresist

A cleaning agent and composition technology, applied in the processing of photosensitive materials, etc., can solve the problems of insufficient cleaning ability of photoresist, strong corrosion of semiconductor wafer patterns and substrates, etc., and achieve the effect of cleaning ability

Inactive Publication Date: 2013-03-20
QINGDAO HUADIAN HIGH VOLTAGE ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In summary, the existing cleaning agents have insufficient cleaning ability for photoresists with high thickness, or are highly corrosive to semiconductor wafer patterns and substrates, and have relatively large defects.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] A photoresist cleaning agent composition, consisting of the following components by weight, 5 parts of quaternary ammonium hydroxide, 10 parts of alkyl glycol aryl ether, 11 parts of dimethyl sulfoxide, hexapropylene glycol mono 5 parts of phenyl ether, 4 parts of alkyl glycol aryl ether, 2 parts of trihexyl citrate, 3 parts of chromic anhydride, 2 parts of copper oxide, 1 part of titanium oxide, 3 parts of silicic acid oil, trichlorotrifluoroethyl 4 parts of alkane, 10 parts of methanol, and 20 parts of water.

Embodiment 2

[0014] A photoresist cleaning agent composition, consisting of the following components by weight, 15 parts of quaternary ammonium hydroxide, 15 parts of alkyl glycol aryl ether, 15 parts of dimethyl sulfoxide, hexapropylene glycol mono 16 parts of phenyl ether, 13 parts of alkyl glycol aryl ether, 8 parts of trihexyl citrate, 5 parts of chromic anhydride, 6 parts of copper oxide, 5 parts of titanium oxide, 7 parts of silicic acid oil, trichlorotrifluoroethyl 9 parts of alkane, 20 parts of methanol, and 25 parts of water.

Embodiment 3

[0016] A photoresist cleaning agent composition, consisting of the following components by weight, 8 parts of quaternary ammonium hydroxide, 13 parts of alkyl glycol aryl ether, 14 parts of dimethyl sulfoxide, hexaisopropylene glycol mono 9 parts of phenyl ether, 6 parts of alkyl glycol aryl ether, 5 parts of trihexyl citrate, 4 parts of chromic anhydride, 3 parts of copper oxide, 2 parts of titanium oxide, 5 parts of silicic acid oil, trichlorotrifluoroethyl 7 parts of alkane, 15 parts of methanol, and 22 parts of water.

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PUM

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Abstract

The invention discloses a cleaning agent composition for a photoresist, which is composed of the following components in parts by weight: 5-15 parts of quaternary ammonium hydroxide, 10-15 parts of alkyl diol aryl ether, 11-15 parts of dimethyl sulfoxide, 5-16 parts of hexa-isopropylene glycol monophenyl ether, 4-13 parts of alkyl diol aryl ether, 2-8 parts of trihexyl citrate, 3-5 parts of chromic anhydride, 2-6 parts of copper oxide, 1-5 parts of titanium oxide, 3-7 parts of silicic acid, 4-9 parts of trichlorotrifluoroethane, 10-20 parts of methanol, and 20-25 parts of water. The cleaning agent composition for a photoresist disclosed by the invention has a cleaning capacity for the negative photoresist with a high crosslinking degree.

Description

technical field [0001] The present invention relates to a cleaning agent composition. Background technique [0002] At present, the cleaning agent composition is mainly composed of strong alkali, polar organic solvent and / or water, etc., and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning agent or rinsing the semiconductor wafer with the cleaning agent. [0003] Water in chemical cleaners is sometimes necessary in order to improve the cleaning agent's ability to hydrolyze and / or dissolve the photoresist and / or photoresist residues produced by etching. However, when the water content is too high, the cleaning agent has insufficient ability to remove the photoresist and / or the photoresist residue produced by etching, and it is easy to cause corrosion of the wafer pattern and the substrate. [0004] A cleaning agent composed of alcohol amine and organic polar solvent is proposed in US4617251. The semiconductor wafer i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
Inventor 张立刚曲健张磊武刚
Owner QINGDAO HUADIAN HIGH VOLTAGE ELECTRIC CO LTD
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