Device and method for testing characteristics of semiconductor element
A characteristic test and semiconductor technology, applied in the direction of single semiconductor device test, test dielectric strength, etc., can solve the problems of inability to apply voltage, inability to test dielectric strength, etc., and achieve the effect of reducing test costs
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Embodiment 1）
[0100] figure 1 It is a structural diagram of main parts of a semiconductor device characteristic testing device 100 according to the first embodiment of the present invention, figure 1 (a) is a side view of the main part, figure 1 (b) is viewed from arrow A figure 1 (a) The main part of the above diagram. This characteristic testing apparatus 100 performs a dielectric strength test of a resin sealing portion 15 of a semiconductor element (for example, a TO-3P type IGBT 10 ) while performing a characteristic test, and includes a voltage application device 1 .
[0101] exist figure 1 In (a), 600 is a characteristic testing unit inside the characteristic testing device 100 . Take the automatic test line as an example. The resin-sealed IGBT10 is on the conveying track 51 of the automatic test line, for example, from figure 1 (a) The inside of the paper surface is conveyed toward the front, from figure 1 (b) is transported downwards from the upper side of the paper. ...
Embodiment 2）
[0129] Figure 3 ~ Figure 5 It is a test process diagram illustrating the characteristic test method of the semiconductor device according to the second embodiment of the present invention in order of process. Among them, 61 a in the figure is a power supply / main circuit unit that generates a test voltage applied to the IGBT 10 , and 62 a is a characteristic evaluation unit that detects, measures, and evaluates a leakage current of the IGBT 10 .
[0130] The semiconductor element is, for example, an IGBT having a TO-3P type resin sealing portion, and is used as figure 1 The characteristic test method of leakage current characteristic test and dielectric strength test at the same time.
[0131] First, in image 3 In this example, an IGBT 10 having a TO-3P type resin sealing portion 15 as a test piece was placed on an insulator 52 placed on a transport rail 51 .
[0132] A switch SW for short-circuiting the test probe 58c connected to the gate terminal 13c and the test probe...
Embodiment 3）
[0147] Figure 9 It is a cross-sectional view of main parts of a semiconductor device characteristic testing device 200 according to a third embodiment of the present invention. Figure 9 The characteristic test device 200 with figure 1 The difference of the characteristic testing device 100 is that the connection between the voltage application device 1 and the collector electrode 13a is such that a part of the electrode 3 constituting the voltage application device 1 and the part of the electrode 3 on which the IGBT chip 12 is mounted are exposed from the resin sealing part 15. The die portion 11 is in contact with the G portion. By adopting this structure, the wiring 2 for connecting the collector terminal 13a and the voltage application device 1 becomes unnecessary. Also in this case, the same effect as above can be obtained.
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