A kind of aluminum nitride crystal growth preparation furnace
A technology of crystal growth and aluminum nitride, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of removing impurities, the purity of aluminum nitride crystal can not meet the higher technical requirements of semiconductor components, etc., to reduce impurities content, the effect of improving the purity
Active Publication Date: 2016-04-06
内蒙古恒嘉晶体材料有限公司
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Problems solved by technology
However, the current aluminum nitride crystal preparation process does not remove impurities from the attachment site of aluminum nitride, so the purity of the aluminum nitride crystal produced cannot meet the higher technical requirements for the preparation of semiconductor elements.
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[0025] The core of the present invention is to provide an aluminum nitride crystal growth preparation furnace. By setting the crucible lifting shaft, the aluminum nitride crystal growth preparation furnace realizes removing impurities from the growing part of the aluminum nitride crystal on the crucible before the aluminum nitride crystal grows. removal to reduce the impurity content in the aluminum nitride crystal and prepare aluminum nitride crystal with higher purity.
[0026] In order to enable those skilled in the art to better understand the solution of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments.
[0027] Please also refer to figure 1 , figure 1 It is a schematic structural diagram of an aluminum nitride crystal growth preparation furnace provided in an embodiment of the present invention.
[0028] The aluminum nitride crystal growth preparation furnace provided in...
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The invention discloses an aluminum nitride crystal growth preparation furnace. The furnace comprises an attemperator and a tubular heating device with the bottom inside, as well as a crucible lifting shaft, wherein the crucible lifting shaft penetrates through the interior of the tubular heating device with the bottomed through the bottom of the aluminum nitride crystals growth preparation furnace, the crucible lifting shaft is coaxial to the tubular heating device with the bottom and can drive the lower part of a crucible arranged at the end of the crucible lifting shaft to be exposed outside the tubular heating device with the bottom. The aluminum nitride crystals growth preparation furnace is additionally provided with the crucible lifting shaft, impurities at the growth positions of the aluminum nitride crystal can be eliminated in advance before the aluminum nitride crystal grows, impurity content of the aluminum nitride crystals can be further obviously reduced, and the purity of the aluminum nitride crystals can be improved.
Description
technical field [0001] The invention relates to the technical field of aluminum nitride crystal growth, in particular to a preparation furnace for aluminum nitride crystal growth. Background technique [0002] Aluminum nitride crystal itself is an excellent compound semiconductor material with direct bandgap and wide bandgap. It has excellent properties such as high breakdown field strength, high thermal conductivity, and good chemical and thermal stability. It is an ideal ultraviolet optoelectronic material and application. Electronic materials for high temperature, high frequency and high power fields. At the same time, aluminum nitride crystals and gallium nitride crystals have very close lattice constants and thermal expansion coefficients, and are the preferred substrate materials for epitaxial growth of gallium nitride-based optoelectronic devices. Research and development has become a hot spot in the field of semiconductors. [0003] At present, the PVT (Physical Va...
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IPC IPC(8): C30B29/38C30B11/00
Inventor 徐永亮施海斌张国华
Owner 内蒙古恒嘉晶体材料有限公司